Central Semiconductor Corp 2N5087
- Part Number:
- 2N5087
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2463206-2N5087
- Description:
- TRANS PNP 50V 0.05A TO-92
- Datasheet:
- 2N5087
Central Semiconductor Corp 2N5087 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N5087.
- Factory Lead Time4 Weeks
- MountThrough Hole
- Package / CaseTO-92-3
- Number of Pins3
- PackagingTray
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-50V
- Max Power Dissipation625mW
- Current Rating-50mA
- Frequency40MHz
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation625mW
- Gain Bandwidth Product40MHz
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current50mA
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)3V
- hFE Min250
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
2N5087 Overview
The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 3V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.In extreme cases, the collector current can be as low as 50mA volts.
2N5087 Features
a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
2N5087 Applications
There are a lot of MICROSS/On Semiconductor
2N5087 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.An emitter's base voltage can be kept at 3V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -50mA current rating.In extreme cases, the collector current can be as low as 50mA volts.
2N5087 Features
a collector emitter saturation voltage of 300mV
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
2N5087 Applications
There are a lot of MICROSS/On Semiconductor
2N5087 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5087 More Descriptions
50V PNP Low Noise Transistor in TO-92, RoHS
The three parts on the right have similar specifications to 2N5087.
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ImagePart NumberManufacturerFactory Lead TimeMountPackage / CaseNumber of PinsPackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyNumber of ElementsPolarityElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeMounting TypeSupplier Device PackageOperating TemperaturePower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionWeightPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationForward VoltageRMS Current (Irms)Hold CurrentTrigger Device TypeOn-State Current-MaxRepetitive Peak Off-state VoltageLeakage Current (Max)Non-Repetitive Pk On-state CurRepetitive Peak Reverse VoltageRMS On-state Current-MaxDC Gate Trigger Current-MaxDC Gate Trigger Voltage-MaxCircuit Commutated Turn-off Time-NomAdditional FeatureReach Compliance CodeCase ConnectionVoltage - Gate Trigger (Vgt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Gate Trigger (Igt) (Max)Current - On State (It (RMS)) (Max)Current - On State (It (AV)) (Max)SCR TypeVoltage - On State (Vtm) (Max)Current - Off State (Max)View Compare
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2N50874 WeeksThrough HoleTO-92-33TrayActive3 (168 Hours)150°C-55°C-50V625mW-50mA40MHz1PNPSingle625mW40MHz50V50mA300mV50V3V250RoHS CompliantContains Lead----------------------------------------------------
-
--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Reel (TR)Obsolete1 (Unlimited)-----------------Non-RoHS Compliant-Through HoleTO-92-3-55°C~150°C TJ625mWPNP250 @ 100μA 5V50nA ICBO300mV @ 1mA, 10mA50V50mA40MHz----------------------------------------
-
20 WeeksThrough HoleTO-92-BulkActive-125°C-40°C----1----------RoHS Compliant------------453.59237mg2007e0no3EAR99Tin/Lead (Sn/Pb)8541.30.00.80Silicon Controlled RectifiersBOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not QualifiedSINGLE1.7V800mA5mASCR510A30V0.01mA10 A30V0.8A0.2mA0.8V10 μs-----------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA)3BulkObsolete1 (Unlimited)--200V-500mA-1----------ROHS3 CompliantLead FreeThrough Hole--40°C~110°C---------2005e3-3EAR99Matte Tin (Sn)-Silicon Controlled RectifiersBOTTOM260103-Not QualifiedSINGLE-800mA5mASCR--0.01mA10 A----30 μsHIGH RELIABILITYunknownISOLATED800mV16A 20A200μA800mA510mASensitive Gate1.7V1μA
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