SEME-LAB 2N5050 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5050.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Number of Pins3
- PackagingBulk
- Published2007
- Part StatusActive
- Max Power Dissipation40W
- Collector Emitter Voltage (VCEO)125V
- Max Collector Current2A
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N5050 Overview
A maximum collector current of 2A volts can be achieved.
2N5050 Features
2N5050 Applications
There are a lot of Microsemi Corporation
2N5050 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A maximum collector current of 2A volts can be achieved.
2N5050 Features
2N5050 Applications
There are a lot of Microsemi Corporation
2N5050 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5050 More Descriptions
Trans GP BJT NPN 125V 2A 3-Pin(2 Tab) TO-66
Power BJT _ TO-66
NPN SILICON TRANSISTOR
Compliant Through Hole Bulk 3 No 2 A 40 W 125 V
Power BJT _ TO-66
NPN SILICON TRANSISTOR
Compliant Through Hole Bulk 3 No 2 A 40 W 125 V
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