SEME-LAB 2N5013

Name: 2N5013
Brand: SEME-LAB
SKU: 5642502-2N5013
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5013

Manufacturer:: SEME-LAB

Ventron No:: 5642502-2N5013

Description:: Bipolar NPN Device

ECAD Model:

Datasheet:: 2N5013

Part Pictures

Specifications

SEME-LAB 2N5013 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N5013.

Lifecycle Status
OBSOLETE (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Current - Collector (Ic) (Max)
200mA
Collector Base Voltage (VCBO)
800V
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

2N5013 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 20mA 10V.During maximum operation, collector current can be as low as 200mA volts.

2N5013 Features
the DC current gain for this device is 30 @ 20mA 10V

2N5013 Applications
There are a lot of Microsemi Corporation
2N5013 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to 2N5013.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Max Power Dissipation

Terminal Position

Terminal Form

Number of Elements

Configuration

Polarity/Channel Type

Transistor Type

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Current - Collector (Ic) (Max)

Collector Base Voltage (VCBO)

Radiation Hardening

RoHS Status

Factory Lead Time

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Frequency

Polarity

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Collector Emitter Saturation Voltage

Emitter Base Voltage (VEBO)

hFE Min

Lead Free

Weight

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Forward Voltage

RMS Current (Irms)

Hold Current

Trigger Device Type

On-State Current-Max

Repetitive Peak Off-state Voltage

Leakage Current (Max)

Non-Repetitive Pk On-state Cur

Repetitive Peak Reverse Voltage

RMS On-state Current-Max

DC Gate Trigger Current-Max

DC Gate Trigger Voltage-Max

Circuit Commutated Turn-off Time-Nom

Additional Feature

Reach Compliance Code

Case Connection

Voltage - Gate Trigger (Vgt) (Max)

Current - Non Rep. Surge 50, 60Hz (Itsm)

Current - Gate Trigger (Igt) (Max)

Current - On State (It (RMS)) (Max)

Current - On State (It (AV)) (Max)

SCR Type

Voltage - On State (Vtm) (Max)

Current - Off State (Max)

View Compare
2N5013

SEME-LAB

OBSOLETE (Last Updated: 3 weeks ago)

Through Hole

Through Hole

TO-205AA, TO-5-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

2007

e0

no

Obsolete

Not Applicable

3

EAR99

TIN LEAD

8541.29.00.95

1W

BOTTOM

WIRE

1

SINGLE

NPN

NPN

200mA

30 @ 20mA 10V

10nA ICBO

200mA

800V

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N5087

Central Semiconductor Corp

-

Through Hole

-

TO-92-3

3

-

-

Tray

-

-

-

Active

3 (168 Hours)

-

-

-

-

625mW

-

-

1

-

-

-

50mA

-

-

-

50V

-

RoHS Compliant

4 Weeks

150°C

-55°C

-50V

-50mA

40MHz

PNP

Single

625mW

40MHz

50V

300mV

3V

250

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N5013 vs 2N5087
2N5060

Central Semiconductor Corp

-

Through Hole

-

TO-92

-

-

-

Bulk

2007

e0

no

Active

-

3

EAR99

Tin/Lead (Sn/Pb)

8541.30.00.80

-

BOTTOM

-

1

SINGLE

-

-

-

-

-

-

-

-

RoHS Compliant

20 Weeks

125°C

-40°C

-

-

-

-

-

-

-

-

-

-

-

-

453.59237mg

Silicon Controlled Rectifiers

NOT SPECIFIED

NOT SPECIFIED

3

O-PBCY-T3

Not Qualified

1.7V

800mA

5mA

SCR

510A

30V

0.01mA

10 A

30V

0.8A

0.2mA

0.8V

10 μs

-

-

-

-

-

-

-

-

-

-

-

2N5013 vs 2N5060
2N5064

Central Semiconductor Corp

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

3

-

-40°C~110°C

Bulk

2005

e3

-

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

BOTTOM

-

1

SINGLE

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

200V

500mA

-

-

-

-

-

-

-

-

-

Lead Free

-

Silicon Controlled Rectifiers

260

10

3

-

Not Qualified

-

800mA

5mA

SCR

-

-

0.01mA

10 A

-

-

-

-

30 μs

HIGH RELIABILITY

unknown

ISOLATED

800mV

16A 20A

200μA

800mA

510mA

Sensitive Gate

1.7V

1μA

2N5013 vs 2N5064