SEME-LAB 2N4914 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N4914.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Number of Pins3
- PackagingBulk
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Max Operating Temperature125°C
- Min Operating Temperature-55°C
- HTS Code8541.29.00.95
- Max Power Dissipation88W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Pin Count2
- JESD-30 CodeO-MBFM-P2
- Polarity/Channel TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current5A
- DC Current Gain-Min (hFE)25
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
2N4914 Overview
Maximum collector currents can be below 5A volts.
2N4914 Features
2N4914 Applications
There are a lot of Microsemi Corporation
2N4914 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
Maximum collector currents can be below 5A volts.
2N4914 Features
2N4914 Applications
There are a lot of Microsemi Corporation
2N4914 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N4914 More Descriptions
Trans GP BJT NPN 60V 5A 3-Pin(2 Tab) TO-3
Bipolar Transistors - BJT Power BJT
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N4914
Compliant Through Hole Bulk 3 No 5 A 88 W 125 °C
TRANSISTORBJTNPN60V V(BR)CEO5A I(C)TO-3
Bipolar Transistors - BJT Power BJT
Power Bjt To-3 Rohs Compliant: Yes |Microchip 2N4914
Compliant Through Hole Bulk 3 No 5 A 88 W 125 °C
TRANSISTORBJTNPN60V V(BR)CEO5A I(C)TO-3
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