ON Semiconductor 2N3055AG
- Part Number:
- 2N3055AG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2463306-2N3055AG
- Description:
- TRANS NPN 60V 15A TO-3
- Datasheet:
- 2N3055AG
ON Semiconductor 2N3055AG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N3055AG.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time13 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-204AA, TO-3
- Surface MountNO
- Number of Pins2
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingTray
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation115W
- Terminal PositionBOTTOM
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)260
- Current Rating15A
- Frequency6MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N3055
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation115W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product6MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current15A
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 4A 2V
- Current - Collector Cutoff (Max)700μA
- Vce Saturation (Max) @ Ib, Ic5V @ 7A, 15A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency0.8MHz
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)7V
- hFE Min10
- Height26.67mm
- Length39.37mm
- Width8.509mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N3055AG Overview
This device has a DC current gain of 10 @ 4A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 5V @ 7A, 15A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 0.8MHz.A maximum collector current of 15A volts is possible.
2N3055AG Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
2N3055AG Applications
There are a lot of ON Semiconductor
2N3055AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 10 @ 4A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.1V.A VCE saturation (Max) of 5V @ 7A, 15A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 0.8MHz.A maximum collector current of 15A volts is possible.
2N3055AG Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
2N3055AG Applications
There are a lot of ON Semiconductor
2N3055AG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N3055AG More Descriptions
ON Semi NPN Bipolar Transistor 15 A 60 V 2-Pin TO-204AA | ON Semiconductor 2N3055AG
15 A, 60 V NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
2N Series 60 V 15 A NPN Complementary Silicon High-Power Transistor - TO-204AA
TRANSISTOR, BIPOL, NPN, 60V, TO-204-2; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 6MHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 2.5hFE; Trans
. . . PowerBase complementary transistors designed for high power audio stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers dc-to-dc converters inverters or for inductive loads requiring higher safe operating area than the 2N3055.
15 A, 60 V NPN Bipolar Power Transistor
Trans GP BJT NPN 60V 15A 115000mW 3-Pin(2 Tab) TO-3 Tray
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
2N Series 60 V 15 A NPN Complementary Silicon High-Power Transistor - TO-204AA
TRANSISTOR, BIPOL, NPN, 60V, TO-204-2; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 6MHz; Power Dissipation Pd: 115W; DC Collector Current: 15A; DC Current Gain hFE: 2.5hFE; Trans
. . . PowerBase complementary transistors designed for high power audio stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers dc-to-dc converters inverters or for inductive loads requiring higher safe operating area than the 2N3055.
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