SEME-LAB 2N2895 technical specifications, attributes, parameters and parts with similar specifications to SEME-LAB 2N2895.
- Factory Lead Time12 Weeks
- Surface MountNO
- Transistor Element MaterialSILICON
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Operating Temperature (Max)200°C
- Number of Elements1
- ConfigurationSINGLE
- Polarity/Channel TypeNPN
- JEDEC-95 CodeTO-206AA
- Transition Frequency120MHz
- Power Dissipation-Max (Abs)0.5W
- Collector Current-Max (IC)1A
- DC Current Gain-Min (hFE)40
- Collector-Emitter Voltage-Max65V
- RoHS StatusNon-RoHS Compliant
2N2895 Overview
As you can see, the part has a transition frequency of 120MHz.65V is the maximization voltage for the collector-emitter.
2N2895 Features
a transition frequency of 120MHz
2N2895 Applications
There are a lot of Microsemi Corporation
2N2895 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As you can see, the part has a transition frequency of 120MHz.65V is the maximization voltage for the collector-emitter.
2N2895 Features
a transition frequency of 120MHz
2N2895 Applications
There are a lot of Microsemi Corporation
2N2895 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2895 More Descriptions
Power Bjt To-18 Rohs Compliant: Yes |Microchip 2N2895
Small Signal NPN Transistor 65V 1A 3-Pin TO-18
Bipolar Transistors - BJT BJTs
Small Signal NPN Transistor 65V 1A 3-Pin TO-18
Bipolar Transistors - BJT BJTs
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DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFA
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HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MO
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