SEME-LAB 2N2222
- Part Number:
- 2N2222
- Manufacturer:
- SEME-LAB
- Ventron No:
- 5643057-2N2222
- Description:
- Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.
- ECAD Model:
-
part#2N2222, Manufacturer:SEME-LAB is available at ventronchip.com, see description of 2N2222 as below .use the request quote form to request 2N2222 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for 2N2222 depending on the quantity required, availability and warehouse location.
2N2222 More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 30 V, 500 Mw, 800 Ma, 100 Rohs Compliant: Yes |Multicomp Pro 2N2222
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, NPN
Transistor, NPN, 30V, 800MA, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power
TRANSISTOR, NPN, 30V, 800MA, TO-18; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 500mW; DC Collector Current: 800mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-18; No. of Pins: 3Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 800mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 800mA; Current Ic hFE: 150mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -65°C; Pin Configuration: a; Power Dissipation Ptot Max: 500mW; Voltage Vcbo: 60V
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