Part Number: IPB136N08N3 G vs IPB100N06S3-04

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Part Number: IPB136N08N3 G IPB100N06S3-04
Manufacturer: Infineon Technologies Infineon Technologies
Description: MOSFET N-CH 80V 45A TO263-3 MOSFET N-CH 55V 100A TO-263
Quantity Available: Available Available
Datasheets: IPx136,139N08N3 G IP(B,I,P)100N06S3-04
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads Tab), TO-263AB TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount YES -
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tape & Reel (TR) Tape & Reel (TR)
Series OptiMOS™ OptiMOS™
Published 2011 -
JESD-609 Code e3 -
Pbfree Code yes -
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 2 -
ECCN Code EAR99 -
Terminal Finish MATTE TIN -
Subcategory FET General Purpose Power -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Terminal Position SINGLE -
Terminal Form GULL WING -
Peak Reflow Temperature (Cel) 260 -
Reach Compliance Code compliant -
Time@Peak Reflow Temperature-Max (s) 40 -
Pin Count 4 -
JESD-30 Code R-PSSO-G2 -
Qualification Status Not Qualified -
Number of Elements 1 -
Configuration SINGLE WITH BUILT-IN DIODE -
Power Dissipation-Max 79W Tc 214W Tc
Operating Mode ENHANCEMENT MODE -
Case Connection DRAIN -
FET Type N-Channel N-Channel
Transistor Application SWITCHING -
Rds On (Max) @ Id, Vgs 13.6m Ω @ 45A, 10V 4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33μA 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 40V 14.23pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc 100A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V 314nC @ 10V
Drain to Source Voltage (Vdss) 80V 55V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V 10V
Vgs (Max) ±20V ±20V
Drain Current-Max (Abs) (ID) 45A -
Drain-source On Resistance-Max 0.0136Ohm -
Pulsed Drain Current-Max (IDM) 180A -
DS Breakdown Voltage-Min 80V -
Avalanche Energy Rating (Eas) 50 mJ -
RoHS Status RoHS Compliant ROHS3 Compliant
Supplier Device Package - PG-TO263-3-2
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