| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
NTD50N03R-35G |
NTD5804NT4G |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
MOSFET N-CH 25V 7.8A IPAK |
MOSFET N-CH 40V 69A DPAK |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mounting Type |
Through Hole |
Surface Mount |
| Package / Case |
TO-251-3 Stub Leads, IPak |
TO-252-3, DPak (2 Leads Tab), SC-63 |
| Surface Mount |
NO |
YES |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
| Packaging |
Tube |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
no |
yes |
| Part Status |
Obsolete |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
3 |
2 |
| Terminal Finish |
MATTE TIN |
Tin (Sn) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Terminal Position |
SINGLE |
- |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
- |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
- |
| Pin Count |
3 |
4 |
| JESD-30 Code |
R-PSIP-T3 |
R-PSSO-G2 |
| Qualification Status |
COMMERCIAL |
- |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Power Dissipation-Max |
1.5W Ta 50W Tc |
71W Tc |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Case Connection |
DRAIN |
DRAIN |
| FET Type |
N-Channel |
N-Channel |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12m Ω @ 30A, 11.5V |
8.5m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
750pF @ 12V |
2850pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
7.8A Ta 45A Tc |
69A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 11.5V |
45nC @ 10V |
| Drain to Source Voltage (Vdss) |
25V |
- |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 11.5V |
5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Drain Current-Max (Abs) (ID) |
7.8A |
- |
| Drain-source On Resistance-Max |
0.014Ohm |
0.0085Ohm |
| Pulsed Drain Current-Max (IDM) |
180A |
- |
| DS Breakdown Voltage-Min |
25V |
- |
| Avalanche Energy Rating (Eas) |
20 mJ |
- |
| RoHS Status |
ROHS3 Compliant |
RoHS Compliant |
| Lifecycle Status |
- |
LAST SHIPMENTS (Last Updated: 3 days ago) |
| Number of Pins |
- |
4 |
| Published |
- |
1997 |
| ECCN Code |
- |
EAR99 |
| Subcategory |
- |
FET General Purpose Power |
| Terminal Form |
- |
GULL WING |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
71W |
| Turn On Delay Time |
- |
11.8 ns |
| Rise Time |
- |
18.7ns |
| Fall Time (Typ) |
- |
5.9 ns |
| Turn-Off Delay Time |
- |
26.8 ns |
| Continuous Drain Current (ID) |
- |
69A |
| Threshold Voltage |
- |
2V |
| Gate to Source Voltage (Vgs) |
- |
20V |
| Drain to Source Breakdown Voltage |
- |
40V |
| Height |
- |
2.38mm |
| Length |
- |
6.73mm |
| Width |
- |
6.22mm |
| REACH SVHC |
- |
No SVHC |
| Radiation Hardening |
- |
No |
| Lead Free |
- |
Lead Free |
| Submit RFQ: |
Submit |
Submit |
