Part Number: IRFR2405PBF vs IRFR12N25DTRPBF

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Part Number: IRFR2405PBF IRFR12N25DTRPBF
Manufacturer: Infineon Technologies Infineon Technologies
Description: MOSFET N-CH 55V 56A DPAK MOSFET N-CH 250V 14A DPAK
Quantity Available: Available Available
Datasheets: - IRF(R,U)12N25DPbF
Factory Lead Time 52 Weeks -
Contact Plating Tin -
Mount Surface Mount -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads Tab), SC-63 TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins 3 -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tape & Reel (TR)
Series HEXFET® HEXFET®
Published 2000 2004
Part Status Discontinued Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Termination SMD/SMT -
ECCN Code EAR99 -
Voltage - Rated DC 55V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Current Rating 56A -
Number of Elements 1 -
Power Dissipation-Max 110W Tc 144W Tc
Element Configuration Single -
Power Dissipation 110W -
Turn On Delay Time 15 ns -
FET Type N-Channel N-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 34A, 10V 260m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2430pF @ 25V 810pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc 14A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V 35nC @ 10V
Rise Time 130ns -
Drive Voltage (Max Rds On,Min Rds On) 10V 10V
Vgs (Max) ±20V ±30V
Fall Time (Typ) 78 ns -
Turn-Off Delay Time 55 ns -
Continuous Drain Current (ID) 56A -
Threshold Voltage 4V -
Gate to Source Voltage (Vgs) 20V -
Drain to Source Breakdown Voltage 55V -
Dual Supply Voltage 55V -
Recovery Time 93 ns -
Nominal Vgs 4 V -
Height 2.3876mm -
Length 6.7056mm -
Width 6.22mm -
REACH SVHC No SVHC -
Radiation Hardening No -
RoHS Status ROHS3 Compliant -
Lead Free Contains Lead, Lead Free -
Drain to Source Voltage (Vdss) - 250V
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