IRFR2405PBF
- Part Number:
- IRFR2405PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851054-IRFR2405PBF
- Description:
- MOSFET N-CH 55V 56A DPAK
- Datasheet:
- IRFR2405PBF
Infineon Technologies IRFR2405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2405PBF.
- Factory Lead Time52 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- ECCN CodeEAR99
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Current Rating56A
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Power Dissipation110W
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs16m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2430pF @ 25V
- Current - Continuous Drain (Id) @ 25°C56A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time130ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)78 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)56A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Dual Supply Voltage55V
- Recovery Time93 ns
- Nominal Vgs4 V
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
- Description
- FAQs
- Shipping
IRFR2405PBF Description
International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In a typical surface mount, power dissipation values of up to 1.5 watts are possible.
IRFR2405PBF Features
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFR2405PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In a typical surface mount, power dissipation values of up to 1.5 watts are possible.
IRFR2405PBF Features
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFR2405PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFR2405PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
IRFR2405PBF,MOSFET, 55V, 56A, 16 MOHM, 70 NC QG, D-PAK55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:56A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:220A; SMD Marking:IRFR2405; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 55 V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
IRFR2405PBF,MOSFET, 55V, 56A, 16 MOHM, 70 NC QG, D-PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:56A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:220A; SMD Marking:IRFR2405; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFR2405PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationECCN CodeVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Transistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFR2405PBF52 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTubeHEXFET®2000Discontinued1 (Unlimited)SMD/SMTEAR9955VMOSFET (Metal Oxide)56A1110W TcSingle110W15 nsN-Channel16m Ω @ 34A, 10V4V @ 250μA2430pF @ 25V56A Tc110nC @ 10V130ns10V±20V78 ns55 ns56A4V20V55V55V93 ns4 V2.3876mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free----------------------
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---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--48W Tc---N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-10V±20V----------------100V--------------------
-
---Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V----------------250V--------------------
-
--Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)-EAR99150VMOSFET (Metal Oxide)14A186W Tc---N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns10V±30V--14A-----------Non-RoHS CompliantContains Lead-SILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA0.18Ohm56A130 mJ
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