IRFR2405PBF

IRFR2405PBF

Part Number:
IRFR2405PBF
Manufacturer:
Infineon Technologies
Ventron No:
2851054-IRFR2405PBF
Description:
MOSFET N-CH 55V 56A DPAK
ECAD Model:
Datasheet:
IRFR2405PBF

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Specifications
Infineon Technologies IRFR2405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2405PBF.
  • Factory Lead Time
    52 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2000
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    56A
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Power Dissipation
    110W
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 34A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2430pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    56A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    130ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    78 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    56A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Recovery Time
    93 ns
  • Nominal Vgs
    4 V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
  • Description
  • FAQs
  • Shipping
IRFR2405PBF Description
International Rectifier's Seventh Generation HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. The D-Pak is made to be surface mounted utilizing infrared, vapor phase, or wave soldering methods. For throughhole mounting applications, use the straight lead version (IRFU series). In a typical surface mount, power dissipation values of up to 1.5 watts are possible.

IRFR2405PBF Features
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free

IRFR2405PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRFR2405PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
IRFR2405PBF,MOSFET, 55V, 56A, 16 MOHM, 70 NC QG, D-PAK55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 56A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:55V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:56A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:220A; SMD Marking:IRFR2405; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFR2405PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    ECCN Code
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR2405PBF
    IRFR2405PBF
    52 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Discontinued
    1 (Unlimited)
    SMD/SMT
    EAR99
    55V
    MOSFET (Metal Oxide)
    56A
    1
    110W Tc
    Single
    110W
    15 ns
    N-Channel
    16m Ω @ 34A, 10V
    4V @ 250μA
    2430pF @ 25V
    56A Tc
    110nC @ 10V
    130ns
    10V
    ±20V
    78 ns
    55 ns
    56A
    4V
    20V
    55V
    55V
    93 ns
    4 V
    2.3876mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NCTRLPBF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    48W Tc
    -
    -
    -
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Ta
    25nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRPBF
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    -
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    Obsolete
    1 (Unlimited)
    -
    EAR99
    150V
    MOSFET (Metal Oxide)
    14A
    1
    86W Tc
    -
    -
    -
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    0.18Ohm
    56A
    130 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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