Part Number: IRFR2405PBF vs IRFR13N15DTR
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| Part Number: | IRFR2405PBF | IRFR13N15DTR |
| Manufacturer: | Infineon Technologies | Infineon Technologies |
| Description: | MOSFET N-CH 55V 56A DPAK | MOSFET N-CH 150V 14A DPAK |
| Quantity Available: | Available | Available |
| Datasheets: | - | IRFR13N15D, IRFU13N15D |
| Factory Lead Time | 52 Weeks | - |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads Tab), SC-63 | TO-252-3, DPak (2 Leads Tab), SC-63 |
| Number of Pins | 3 | - |
| Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
| Packaging | Tube | Tape & Reel (TR) |
| Series | HEXFET® | HEXFET® |
| Published | 2000 | 2000 |
| Part Status | Discontinued | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Termination | SMD/SMT | - |
| ECCN Code | EAR99 | EAR99 |
| Voltage - Rated DC | 55V | 150V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Current Rating | 56A | 14A |
| Number of Elements | 1 | 1 |
| Power Dissipation-Max | 110W Tc | 86W Tc |
| Element Configuration | Single | - |
| Power Dissipation | 110W | - |
| Turn On Delay Time | 15 ns | - |
| FET Type | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 34A, 10V | 180m Ω @ 8.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2430pF @ 25V | 620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc | 14A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V | 29nC @ 10V |
| Rise Time | 130ns | 26ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 10V |
| Vgs (Max) | ±20V | ±30V |
| Fall Time (Typ) | 78 ns | - |
| Turn-Off Delay Time | 55 ns | - |
| Continuous Drain Current (ID) | 56A | 14A |
| Threshold Voltage | 4V | - |
| Gate to Source Voltage (Vgs) | 20V | - |
| Drain to Source Breakdown Voltage | 55V | - |
| Dual Supply Voltage | 55V | - |
| Recovery Time | 93 ns | - |
| Nominal Vgs | 4 V | - |
| Height | 2.3876mm | - |
| Length | 6.7056mm | - |
| Width | 6.22mm | - |
| REACH SVHC | No SVHC | - |
| Radiation Hardening | No | - |
| RoHS Status | ROHS3 Compliant | Non-RoHS Compliant |
| Lead Free | Contains Lead, Lead Free | Contains Lead |
| Transistor Element Material | - | SILICON |
| JESD-609 Code | - | e3 |
| Number of Terminations | - | 2 |
| Terminal Finish | - | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | - | FET General Purpose Power |
| Terminal Position | - | SINGLE |
| Terminal Form | - | GULL WING |
| Peak Reflow Temperature (Cel) | - | 260 |
| Reach Compliance Code | - | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | - | 30 |
| JESD-30 Code | - | R-PSSO-G2 |
| Qualification Status | - | Not Qualified |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | - | ENHANCEMENT MODE |
| Case Connection | - | DRAIN |
| Transistor Application | - | SWITCHING |
| JEDEC-95 Code | - | TO-252AA |
| Drain-source On Resistance-Max | - | 0.18Ohm |
| Pulsed Drain Current-Max (IDM) | - | 56A |
| Avalanche Energy Rating (Eas) | - | 130 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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IRFR13N15PBF | IR | Compare | |
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IRFR130A | IR | Compare | |
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IRFR13N20D | IR | Compare | |
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IRFR13N20DTRLPBF | IR | Compare | |
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IRFR13N15D | IR/VISHAY | Compare | |
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IRFR13N15DTRPBF | IR | ORIGINAL IN STOCK | Compare |
