Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
|
|
Part Number: |
MRF6V13250HSR5 |
MRF6V3090NBR1 |
Manufacturer: |
NXP USA Inc. |
NXP USA Inc. |
Description: |
FET RF 120V 1.3GHZ NI780S |
FET RF 110V 860MHZ TO272-4 |
Quantity Available: |
Available |
Available |
Datasheets: |
-
|
-
|
Factory Lead Time |
10 Weeks |
10 Weeks |
Package / Case |
NI-780S |
TO-272BB |
Surface Mount |
YES |
YES |
Transistor Element Material |
SILICON |
SILICON |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Published |
2011 |
2006 |
Part Status |
Active |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
Not Applicable |
3 (168 Hours) |
Number of Terminations |
2 |
4 |
ECCN Code |
EAR99 |
EAR99 |
Voltage - Rated |
120V |
110V |
HTS Code |
8541.29.00.75 |
8541.29.00.75 |
Subcategory |
FET General Purpose Power |
FET General Purpose Power |
Terminal Position |
DUAL |
DUAL |
Terminal Form |
FLAT |
FLAT |
Peak Reflow Temperature (Cel) |
260 |
260 |
Frequency |
1.3GHz |
860MHz |
Time@Peak Reflow Temperature-Max (s) |
40 |
40 |
Base Part Number |
MRF6V13250 |
MRF6V3090 |
JESD-30 Code |
R-CDFP-F2 |
R-PDFM-F4 |
Qualification Status |
Not Qualified |
Not Qualified |
Operating Temperature (Max) |
225°C |
225°C |
Number of Elements |
1 |
1 |
Configuration |
SINGLE |
SINGLE |
Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Case Connection |
SOURCE |
SOURCE |
Current - Test |
100mA |
350mA |
Transistor Application |
AMPLIFIER |
AMPLIFIER |
Polarity/Channel Type |
N-CHANNEL |
N-CHANNEL |
Transistor Type |
LDMOS |
LDMOS |
Gain |
22.7dB |
22dB |
DS Breakdown Voltage-Min |
120V |
115V |
Power - Output |
250W |
18W |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) |
476W |
- |
Voltage - Test |
50V |
50V |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
JESD-609 Code |
- |
e3 |
Terminal Finish |
- |
Matte Tin (Sn) |
Additional Feature |
- |
ESD PROTECTION |
Submit RFQ: |
Submit |
Submit |