Part Number: MRF6V13250HSR5 vs MRF6V3090NBR1

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Part Number: MRF6V13250HSR5 MRF6V3090NBR1
Manufacturer: NXP USA Inc. NXP USA Inc.
Description: FET RF 120V 1.3GHZ NI780S FET RF 110V 860MHZ TO272-4
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 10 Weeks 10 Weeks
Package / Case NI-780S TO-272BB
Surface Mount YES YES
Transistor Element Material SILICON SILICON
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2011 2006
Part Status Active Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable 3 (168 Hours)
Number of Terminations 2 4
ECCN Code EAR99 EAR99
Voltage - Rated 120V 110V
HTS Code 8541.29.00.75 8541.29.00.75
Subcategory FET General Purpose Power FET General Purpose Power
Terminal Position DUAL DUAL
Terminal Form FLAT FLAT
Peak Reflow Temperature (Cel) 260 260
Frequency 1.3GHz 860MHz
Time@Peak Reflow Temperature-Max (s) 40 40
Base Part Number MRF6V13250 MRF6V3090
JESD-30 Code R-CDFP-F2 R-PDFM-F4
Qualification Status Not Qualified Not Qualified
Operating Temperature (Max) 225°C 225°C
Number of Elements 1 1
Configuration SINGLE SINGLE
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Case Connection SOURCE SOURCE
Current - Test 100mA 350mA
Transistor Application AMPLIFIER AMPLIFIER
Polarity/Channel Type N-CHANNEL N-CHANNEL
Transistor Type LDMOS LDMOS
Gain 22.7dB 22dB
DS Breakdown Voltage-Min 120V 115V
Power - Output 250W 18W
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 476W -
Voltage - Test 50V 50V
RoHS Status ROHS3 Compliant ROHS3 Compliant
JESD-609 Code - e3
Terminal Finish - Matte Tin (Sn)
Additional Feature - ESD PROTECTION
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