| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
PBLS6023D,115 |
PBLS2001S,115 |
| Manufacturer: |
Nexperia USA Inc. |
NXP USA Inc. |
| Description: |
TRANS NPN PREBIAS/PNP 6TSOP |
TRANS NPN PREBIAS/PNP 1.5W 8SO |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
PBLS2001S
|
| Factory Lead Time |
4 Weeks |
- |
| Mount |
Surface Mount |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SC-74, SOT-457 |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
6 |
- |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2009 |
2009 |
| JESD-609 Code |
e3 |
e4 |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
8 |
| Terminal Finish |
Tin (Sn) |
Nickel/Palladium/Gold (Ni/Pd/Au) |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Additional Feature |
BUILT IN BIAS RESISTOR RATIO 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Max Power Dissipation |
760mW |
- |
| Terminal Form |
GULL WING |
GULL WING |
| Pin Count |
6 |
8 |
| Number of Elements |
2 |
2 |
| Polarity |
NPN, PNP |
- |
| Element Configuration |
Dual |
- |
| Power Dissipation |
371mW |
- |
| Transistor Application |
SWITCHING |
SWITCHING |
| Transistor Type |
1 NPN Pre-Biased, 1 PNP |
1 NPN Pre-Biased, 1 PNP |
| Collector Emitter Voltage (VCEO) |
150mV |
- |
| Max Collector Current |
1.5A |
- |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA 5V / 140 @ 1A 2V |
30 @ 20mA 5V / 150 @ 2A 2V |
| Current - Collector Cutoff (Max) |
1μA 100nA |
1μA 100nA |
| Vce Saturation (Max) @ Ib, Ic |
150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A |
150mV @ 500μA, 10mA / 355mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage |
60V |
- |
| Voltage - Collector Emitter Breakdown (Max) |
50V 60V |
50V 20V |
| Current - Collector (Ic) (Max) |
100mA 1.5A |
100mA 3A |
| Transition Frequency |
150MHz |
100MHz |
| Max Breakdown Voltage |
60V |
- |
| Frequency - Transition |
150MHz |
100MHz |
| Emitter Base Voltage (VEBO) |
-5V |
- |
| hFE Min |
285 |
- |
| Resistor - Base (R1) |
10k Ω |
2.2k Ω |
| Continuous Collector Current |
-1.5A |
- |
| Resistor - Emitter Base (R2) |
10k Ω |
2.2k Ω |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
- |
| Surface Mount |
- |
YES |
| Transistor Element Material |
- |
SILICON |
| ECCN Code |
- |
EAR99 |
| HTS Code |
- |
8541.21.00.95 |
| Subcategory |
- |
Other Transistors |
| Terminal Position |
- |
DUAL |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| Base Part Number |
- |
PBLS2001 |
| JESD-30 Code |
- |
R-PDSO-G8 |
| Qualification Status |
- |
Not Qualified |
| Operating Temperature (Max) |
- |
150°C |
| Configuration |
- |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max |
- |
1.5W |
| Polarity/Channel Type |
- |
NPN AND PNP |
| Power Dissipation-Max (Abs) |
- |
1.5W |
| Turn Off Time-Max (toff) |
- |
205ns |
| Turn On Time-Max (ton) |
- |
41ns |
| Submit RFQ: |
Submit |
Submit |
