Nexperia USA Inc. PBLS6023D,115
- Part Number:
- PBLS6023D,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2844426-PBLS6023D,115
- Description:
- TRANS NPN PREBIAS/PNP 6TSOP
- Datasheet:
- PBLS6023D,115
Nexperia USA Inc. PBLS6023D,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBLS6023D,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO 1
- Max Power Dissipation760mW
- Terminal FormGULL WING
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation371mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN Pre-Biased, 1 PNP
- Collector Emitter Voltage (VCEO)150mV
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V / 140 @ 1A 2V
- Current - Collector Cutoff (Max)1μA 100nA
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)50V 60V
- Current - Collector (Ic) (Max)100mA 1.5A
- Transition Frequency150MHz
- Max Breakdown Voltage60V
- Frequency - Transition150MHz
- Emitter Base Voltage (VEBO)-5V
- hFE Min285
- Resistor - Base (R1)10k Ω
- Continuous Collector Current-1.5A
- Resistor - Emitter Base (R2)10k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PBLS6023D,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS6023D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS6023D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PBLS6023D,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBLS6023D,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBLS6023D,115 More Descriptions
Trans Digital BJT NPN/PNP 50V/60V 100mA/1.5A 6-Pin TSOP T/R
PBLS6023D Series 50V/60V 100mA/1.5A PNP/NPN Resistor BISS Load Switch - SC-74
PBLS6023D - 60 V, 1.5 A PNP BISS loadswitch
Transistor,LOADSWITCH,PNP,60V,1.5A,SOT457; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:150MHz;
BISS LOADSWITCH, PNP BISS & NPN RET, -60V, -1.5A, 10KOHM, SOT-457; Collector Emitter Voltage V(br)ceo:-60V; Continuous Collector Current Ic:-1.5A; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
TRANS,LOADSWITCH,PNP,60V,1.5A,SOT457; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 480mW; DC Collector Current: -1.5A; DC Current Gain hFE: 285hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Gain Bandwidth ft Typ: 150MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
PBLS6023D Series 50V/60V 100mA/1.5A PNP/NPN Resistor BISS Load Switch - SC-74
PBLS6023D - 60 V, 1.5 A PNP BISS loadswitch
Transistor,LOADSWITCH,PNP,60V,1.5A,SOT457; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:150MHz;
BISS LOADSWITCH, PNP BISS & NPN RET, -60V, -1.5A, 10KOHM, SOT-457; Collector Emitter Voltage V(br)ceo:-60V; Continuous Collector Current Ic:-1.5A; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm ;RoHS Compliant: Yes
TRANS,LOADSWITCH,PNP,60V,1.5A,SOT457; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: -60V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 480mW; DC Collector Current: -1.5A; DC Current Gain hFE: 285hFE; Transistor Case Style: SOT-457; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Gain Bandwidth ft Typ: 150MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to PBLS6023D,115.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationTerminal FormPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialECCN CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationPower - MaxPolarity/Channel TypePower Dissipation-Max (Abs)HTS CodeTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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PBLS6023D,1154 WeeksSurface MountSurface MountSC-74, SOT-4576Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)150°C-55°CBUILT IN BIAS RESISTOR RATIO 1760mWGULL WING62NPN, PNPDual371mWSWITCHING1 NPN Pre-Biased, 1 PNP150mV1.5A30 @ 5mA 5V / 140 @ 1A 2V1μA 100nA150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A60V50V 60V100mA 1.5A150MHz60V150MHz-5V28510k Ω-1.5A10k ΩNoROHS3 CompliantLead Free-------------------
-
--Surface MountSOT-563, SOT-666-Tape & Reel (TR)2009e3Obsolete1 (Unlimited)6Tin (Sn)--BUILT IN BIAS RESISTOR RATIO IS 1-FLAT62---SWITCHING1 NPN Pre-Biased, 1 PNP--30 @ 5mA 5V / 150 @ 100mA. 2V1μA150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA-50V 40V100mA 500mA300MHz-300MHz--10k Ω-10k Ω-ROHS3 Compliant-YESSILICONEAR99Other TransistorsDUALNOT SPECIFIEDNOT SPECIFIEDPBLS4003R-PDSO-F6Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mWNPN AND PNP0.3W---
-
4 WeeksSurface MountSurface MountSC-74, SOT-4576Tape & Reel (TR)2009e3Active1 (Unlimited)6Tin (Sn)150°C-65°C-600mWGULL WING62NPN, PNPDual-SWITCHING1 NPN Pre-Biased, 1 PNP150mV700mA60 @ 5mA 5V / 300 @ 100mA 5V1μA 100nA150mV @ 500μA, 10mA / 310mV @ 100mA, 1A40V50V 40V100mA 700mA-40V150MHz--22k Ω-22k ΩNoROHS3 Compliant---EAR99--26030PBLS4004----------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)-Tape & Reel (TR)2009e4Obsolete1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)--BUILT-IN BIAS RESISTOR RATIO IS 1-GULL WING82---SWITCHING1 NPN Pre-Biased, 1 PNP--30 @ 20mA 5V / 150 @ 2A 2V1μA 100nA150mV @ 500μA, 10mA / 355mV @ 300mA, 3A-50V 20V100mA 3A100MHz-100MHz--2.2k Ω-2.2k Ω-ROHS3 Compliant-YESSILICONEAR99Other TransistorsDUALNOT SPECIFIEDNOT SPECIFIEDPBLS2001R-PDSO-G8Not Qualified150°CSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR1.5WNPN AND PNP1.5W8541.21.00.95205ns41ns
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