Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
IXBT32N300 |
IXBT2N250 |
Manufacturer: |
IXYS |
IXYS |
Description: |
IGBT 3000V 80A 400W TO268 |
IGBT 2500V 5A 32W TO268 |
Quantity Available: |
Available |
Available |
Datasheets: |
-
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-
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Factory Lead Time |
10 Weeks |
24 Weeks |
Mount |
Surface Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
TO-268-3, D3Pak (2 Leads Tab), TO-268AA |
TO-268-3, D3Pak (2 Leads Tab), TO-268AA |
Transistor Element Material |
SILICON |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
Packaging |
Tube |
Tube |
Series |
BIMOSFET™ |
BIMOSFET™ |
Published |
2009 |
2009 |
JESD-609 Code |
e3 |
e3 |
Pbfree Code |
yes |
yes |
Part Status |
Discontinued |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
Number of Terminations |
2 |
2 |
Terminal Finish |
Matte Tin (Sn) |
Matte Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
Subcategory |
Insulated Gate BIP Transistors |
Insulated Gate BIP Transistors |
Max Power Dissipation |
400W |
32W |
Terminal Position |
SINGLE |
- |
Terminal Form |
GULL WING |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
- |
Reach Compliance Code |
not_compliant |
- |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
- |
Pin Count |
4 |
4 |
JESD-30 Code |
R-PSSO-G2 |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
- |
Number of Elements |
1 |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
Case Connection |
COLLECTOR |
COLLECTOR |
Input Type |
Standard |
Standard |
Power - Max |
400W |
32W |
Transistor Application |
POWER CONTROL |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.2V |
2.5kV |
Max Collector Current |
80A |
5A |
Reverse Recovery Time |
1.5 μs |
920 ns |
Collector Emitter Breakdown Voltage |
3kV |
2.5kV |
Voltage - Collector Emitter Breakdown (Max) |
3000V |
2500V |
Turn On Time |
573 ns |
310 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 32A |
3.5V @ 15V, 2A |
Turn Off Time-Nom (toff) |
795 ns |
252 ns |
Gate Charge |
142nC |
10.6nC |
Current - Collector Pulsed (Icm) |
280A |
13A |
Gate-Emitter Voltage-Max |
20V |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
5.5V |
RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
Element Configuration |
- |
Single |
Radiation Hardening |
- |
No |
Lead Free |
- |
Lead Free |
Submit RFQ: |
Submit |
Submit |