| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
IXBT32N300 |
IXBT6N170 |
| Manufacturer: |
IXYS |
IXYS |
| Description: |
IGBT 3000V 80A 400W TO268 |
IGBT 1700V 12A 75W TO268 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
10 Weeks |
24 Weeks |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
TO-268-3, D3Pak (2 Leads Tab), TO-268AA |
TO-268-3, D3Pak (2 Leads Tab), TO-268AA |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tube |
Tube |
| Series |
BIMOSFET™ |
BIMOSFET™ |
| Published |
2009 |
2008 |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Discontinued |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
2 |
2 |
| Terminal Finish |
Matte Tin (Sn) |
Matte Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
LOW CONDUCTION LOSS |
| Subcategory |
Insulated Gate BIP Transistors |
Insulated Gate BIP Transistors |
| Max Power Dissipation |
400W |
75W |
| Terminal Position |
SINGLE |
- |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
NOT SPECIFIED |
| Pin Count |
4 |
4 |
| JESD-30 Code |
R-PSSO-G2 |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
Not Qualified |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Case Connection |
COLLECTOR |
COLLECTOR |
| Input Type |
Standard |
Standard |
| Power - Max |
400W |
- |
| Transistor Application |
POWER CONTROL |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
3.2V |
1.7kV |
| Max Collector Current |
80A |
12A |
| Reverse Recovery Time |
1.5 μs |
1.08 μs |
| Collector Emitter Breakdown Voltage |
3kV |
1.7kV |
| Voltage - Collector Emitter Breakdown (Max) |
3000V |
1700V |
| Turn On Time |
573 ns |
104 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 32A |
3.4V @ 15V, 6A |
| Turn Off Time-Nom (toff) |
795 ns |
700 ns |
| Gate Charge |
142nC |
17nC |
| Current - Collector Pulsed (Icm) |
280A |
36A |
| Gate-Emitter Voltage-Max |
20V |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
5.5V |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Weight |
- |
4.500005g |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
75W |
| Collector Emitter Saturation Voltage |
- |
2.84V |
| Submit RFQ: |
Submit |
Submit |
