Part Number: IXXH40N65B4 vs IXXH100N60B3

Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product!
Part Number: IXXH40N65B4 IXXH100N60B3
Manufacturer: IXYS IXYS
Description: IGBT 650V 120A 455W TO247AD IGBT 600V 220A 830W TO247AD
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 28 Weeks 28 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Series GenX4™, XPT™ GenX3™, XPT™
Published 2014 2013
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Max Power Dissipation 455W 830W
Element Configuration Single -
Power Dissipation 455W 830W
Input Type Standard Standard
Collector Emitter Voltage (VCEO) 1.8V 1.8V
Max Collector Current 120A 220A
Collector Emitter Breakdown Voltage 650V 600V
Collector Emitter Saturation Voltage 1.5V 1.8V
Test Condition 400V, 40A, 5 Ω, 15V 360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A 1.8V @ 15V, 70A
IGBT Type PT PT
Gate Charge 77nC 143nC
Current - Collector Pulsed (Icm) 240A 480A
Td (on/off) @ 25°C 28ns/144ns 30ns/120ns
Switching Energy 1.4mJ (on), 560μJ (off) 1.9mJ (on), 2mJ (off)
RoHS Status ROHS3 Compliant ROHS3 Compliant
Weight - 6.500007g
Transistor Element Material - SILICON
Number of Terminations - 3
Additional Feature - AVALANCHE RATED
Subcategory - Insulated Gate BIP Transistors
Terminal Position - SINGLE
Base Part Number - IXX*N60
Pin Count - 3
JESD-30 Code - R-PSFM-T3
Qualification Status - Not Qualified
Number of Elements - 1
Configuration - SINGLE
Case Connection - COLLECTOR
Transistor Application - POWER CONTROL
Polarity/Channel Type - N-CHANNEL
JEDEC-95 Code - TO-247AD
Turn On Time - 92 ns
Turn Off Time-Nom (toff) - 350 ns
Gate-Emitter Voltage-Max - 20V
Gate-Emitter Thr Voltage-Max - 5.5V
Lead Free - Lead Free
Submit RFQ: Submit Submit