Part Number: IXXH40N65B4 vs IXXH30N65B4
Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | ||
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Part Number: | IXXH40N65B4 | IXXH30N65B4 |
Manufacturer: | IXYS | IXYS |
Description: | IGBT 650V 120A 455W TO247AD | IGBT 650V 65A 230W TO247AD |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 28 Weeks | 17 Weeks |
Mount | Through Hole | Through Hole |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 |
Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
Packaging | Tube | Tube |
Series | GenX4™, XPT™ | GenX4™, XPT™ |
Published | 2014 | 2013 |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Max Power Dissipation | 455W | 230W |
Element Configuration | Single | Single |
Power Dissipation | 455W | 230W |
Input Type | Standard | Standard |
Collector Emitter Voltage (VCEO) | 1.8V | 2V |
Max Collector Current | 120A | 65A |
Collector Emitter Breakdown Voltage | 650V | 650V |
Collector Emitter Saturation Voltage | 1.5V | 1.66V |
Test Condition | 400V, 40A, 5 Ω, 15V | 400V, 30A, 15 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A | 2V @ 15V, 30A |
IGBT Type | PT | PT |
Gate Charge | 77nC | 52nC |
Current - Collector Pulsed (Icm) | 240A | 146A |
Td (on/off) @ 25°C | 28ns/144ns | 32ns/170ns |
Switching Energy | 1.4mJ (on), 560μJ (off) | 1.55mJ (on), 480μJ (off) |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Subcategory | - | Insulated Gate BIP Transistors |
Turn On Delay Time | - | 32 ns |
Polarity/Channel Type | - | N-CHANNEL |
Turn-Off Delay Time | - | 170 ns |
Gate-Emitter Voltage-Max | - | 20V |
Gate-Emitter Thr Voltage-Max | - | 6.5V |
Lead Free | - | Lead Free |
Submit RFQ: | Submit | Submit |