Part Number: IXXH40N65B4 vs IXXH30N65B4

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Part Number: IXXH40N65B4 IXXH30N65B4
Manufacturer: IXYS IXYS
Description: IGBT 650V 120A 455W TO247AD IGBT 650V 65A 230W TO247AD
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 28 Weeks 17 Weeks
Mount Through Hole Through Hole
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Series GenX4™, XPT™ GenX4™, XPT™
Published 2014 2013
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Max Power Dissipation 455W 230W
Element Configuration Single Single
Power Dissipation 455W 230W
Input Type Standard Standard
Collector Emitter Voltage (VCEO) 1.8V 2V
Max Collector Current 120A 65A
Collector Emitter Breakdown Voltage 650V 650V
Collector Emitter Saturation Voltage 1.5V 1.66V
Test Condition 400V, 40A, 5 Ω, 15V 400V, 30A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A 2V @ 15V, 30A
IGBT Type PT PT
Gate Charge 77nC 52nC
Current - Collector Pulsed (Icm) 240A 146A
Td (on/off) @ 25°C 28ns/144ns 32ns/170ns
Switching Energy 1.4mJ (on), 560μJ (off) 1.55mJ (on), 480μJ (off)
RoHS Status ROHS3 Compliant ROHS3 Compliant
Subcategory - Insulated Gate BIP Transistors
Turn On Delay Time - 32 ns
Polarity/Channel Type - N-CHANNEL
Turn-Off Delay Time - 170 ns
Gate-Emitter Voltage-Max - 20V
Gate-Emitter Thr Voltage-Max - 6.5V
Lead Free - Lead Free
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