Part Number: STGWT20V60DF vs STGW10M65DF2

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Part Number: STGWT20V60DF STGW10M65DF2
Manufacturer: STMicroelectronics STMicroelectronics
Description: IGBT 600V 40A 167W TO3P-3 TRENCH GATE FIELD-STOP IGBT M SE
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 32 Weeks 30 Weeks
Mount Through Hole -
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-247-3
Number of Pins 3 -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tube
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
ECCN Code EAR99 -
Subcategory Insulated Gate BIP Transistors -
Max Power Dissipation 167W -
Base Part Number STGWT20 STGW10
Element Configuration Single -
Power Dissipation 167W -
Input Type Standard Standard
Polarity/Channel Type N-CHANNEL -
Collector Emitter Voltage (VCEO) 600V -
Max Collector Current 40A -
Reverse Recovery Time 40ns 96ns
Collector Emitter Breakdown Voltage 600V -
Collector Emitter Saturation Voltage 2.3V -
Test Condition 400V, 20A, 15V 400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A 2V @ 15V, 10A
IGBT Type Trench Field Stop Trench Field Stop
Gate Charge 116nC 28nC
Current - Collector Pulsed (Icm) 80A 40A
Td (on/off) @ 25°C 38ns/149ns 19ns/91ns
Switching Energy 200μJ (on), 130μJ (off) 120μJ (on), 270μJ (off)
Gate-Emitter Voltage-Max 20V -
Height 26.7mm -
Length 15.7mm -
Width 5.7mm -
Radiation Hardening No -
RoHS Status ROHS3 Compliant ROHS3 Compliant
Lifecycle Status - ACTIVE (Last Updated: 8 months ago)
Series - M
Power - Max - 115W
Voltage - Collector Emitter Breakdown (Max) - 650V
Current - Collector (Ic) (Max) - 20A
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