Part Number: STGWT20V60DF vs STGW10M65DF2
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Part Number: | STGWT20V60DF | STGW10M65DF2 |
Manufacturer: | STMicroelectronics | STMicroelectronics |
Description: | IGBT 600V 40A 167W TO3P-3 | TRENCH GATE FIELD-STOP IGBT M SE |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 32 Weeks | 30 Weeks |
Mount | Through Hole | - |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-3P-3, SC-65-3 | TO-247-3 |
Number of Pins | 3 | - |
Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
Packaging | Tube | Tube |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
ECCN Code | EAR99 | - |
Subcategory | Insulated Gate BIP Transistors | - |
Max Power Dissipation | 167W | - |
Base Part Number | STGWT20 | STGW10 |
Element Configuration | Single | - |
Power Dissipation | 167W | - |
Input Type | Standard | Standard |
Polarity/Channel Type | N-CHANNEL | - |
Collector Emitter Voltage (VCEO) | 600V | - |
Max Collector Current | 40A | - |
Reverse Recovery Time | 40ns | 96ns |
Collector Emitter Breakdown Voltage | 600V | - |
Collector Emitter Saturation Voltage | 2.3V | - |
Test Condition | 400V, 20A, 15V | 400V, 10A, 22 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A | 2V @ 15V, 10A |
IGBT Type | Trench Field Stop | Trench Field Stop |
Gate Charge | 116nC | 28nC |
Current - Collector Pulsed (Icm) | 80A | 40A |
Td (on/off) @ 25°C | 38ns/149ns | 19ns/91ns |
Switching Energy | 200μJ (on), 130μJ (off) | 120μJ (on), 270μJ (off) |
Gate-Emitter Voltage-Max | 20V | - |
Height | 26.7mm | - |
Length | 15.7mm | - |
Width | 5.7mm | - |
Radiation Hardening | No | - |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Lifecycle Status | - | ACTIVE (Last Updated: 8 months ago) |
Series | - | M |
Power - Max | - | 115W |
Voltage - Collector Emitter Breakdown (Max) | - | 650V |
Current - Collector (Ic) (Max) | - | 20A |
Submit RFQ: | Submit | Submit |