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| Part Number: |
IRFR1N60ATRL |
IRFR024NTRRPBF |
| Manufacturer: |
Vishay Siliconix |
Infineon Technologies |
| Description: |
MOSFET N-CH 600V 1.4A DPAK |
MOSFET N-CH 55V 17A DPAK |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Mount |
Surface Mount |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
TO-252-3, DPak (2 Leads Tab), SC-63 |
TO-252-3, DPak (2 Leads Tab), SC-63 |
| Number of Pins |
3 |
- |
| Supplier Device Package |
D-Pak |
- |
| Operating Temperature |
-55°C~150°C TJ |
- |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2016 |
2004 |
| Part Status |
Active |
Discontinued |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Power Dissipation-Max |
36W Tc |
45W Tc |
| FET Type |
N-Channel |
N-Channel |
| Rds On (Max) @ Id, Vgs |
7Ohm @ 840mA, 10V |
75m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
229pF @ 25V |
370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.4A Tc |
17A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
20nC @ 10V |
| Drain to Source Voltage (Vdss) |
600V |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
10V |
| Vgs (Max) |
±30V |
±20V |
| Continuous Drain Current (ID) |
1.4A |
- |
| Input Capacitance |
229pF |
- |
| Rds On Max |
7 Ω |
- |
| RoHS Status |
Non-RoHS Compliant |
ROHS3 Compliant |
| Surface Mount |
- |
YES |
| Transistor Element Material |
- |
SILICON |
| Series |
- |
HEXFET® |
| JESD-609 Code |
- |
e3 |
| Number of Terminations |
- |
2 |
| ECCN Code |
- |
EAR99 |
| Terminal Finish |
- |
Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature |
- |
AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Subcategory |
- |
FET General Purpose Power |
| Terminal Position |
- |
SINGLE |
| Terminal Form |
- |
GULL WING |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Reach Compliance Code |
- |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| JESD-30 Code |
- |
R-PSSO-G2 |
| Qualification Status |
- |
Not Qualified |
| Operating Temperature (Max) |
- |
175°C |
| Number of Elements |
- |
1 |
| Configuration |
- |
SINGLE WITH BUILT-IN DIODE |
| Operating Mode |
- |
ENHANCEMENT MODE |
| Case Connection |
- |
DRAIN |
| Transistor Application |
- |
SWITCHING |
| JEDEC-95 Code |
- |
TO-252AA |
| Drain Current-Max (Abs) (ID) |
- |
17A |
| Drain-source On Resistance-Max |
- |
0.075Ohm |
| Pulsed Drain Current-Max (IDM) |
- |
68A |
| DS Breakdown Voltage-Min |
- |
55V |
| Avalanche Energy Rating (Eas) |
- |
71 mJ |
| Submit RFQ: |
Submit |
Submit |
