Vishay Siliconix IRFR1N60ATRL
- Part Number:
- IRFR1N60ATRL
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491721-IRFR1N60ATRL
- Description:
- MOSFET N-CH 600V 1.4A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR1N60ATRL
Vishay Siliconix IRFR1N60ATRL technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR1N60ATRL.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max36W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds229pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.4A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)1.4A
- Input Capacitance229pF
- Rds On Max7 Ω
- RoHS StatusNon-RoHS Compliant
IRFR1N60ATRL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 229pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR1N60ATRL Features
a continuous drain current (ID) of 1.4A
a 600V drain to source voltage (Vdss)
IRFR1N60ATRL Applications
There are a lot of Vishay Siliconix
IRFR1N60ATRL applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 229pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR1N60ATRL Features
a continuous drain current (ID) of 1.4A
a 600V drain to source voltage (Vdss)
IRFR1N60ATRL Applications
There are a lot of Vishay Siliconix
IRFR1N60ATRL applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFR1N60ATRL More Descriptions
MOSFET N-CH 600V 1.4A DPAK
The three parts on the right have similar specifications to IRFR1N60ATRL.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR1N60ATRLSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)MOSFET (Metal Oxide)36W TcN-Channel7Ohm @ 840mA, 10V4V @ 250μA229pF @ 25V1.4A Tc14nC @ 10V600V10V±30V1.4A229pF7 ΩNon-RoHS Compliant----------------------------- -
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---Tape & Reel (TR)2004Discontinued1 (Unlimited)MOSFET (Metal Oxide)45W TcN-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V55V10V±20V---ROHS3 CompliantYESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V------HEXFET®-------------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V------HEXFET®-------------------------
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