| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
2N7002BKW,115 |
2N7002ET3G |
| Manufacturer: |
Nexperia USA Inc. |
ON Semiconductor |
| Description: |
MOSFET N-CH 60V 310MA SOT323 |
MOSFET N-CH 60V 260MA SOT-23 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
4 Weeks |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
YES |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101, TrenchMOS™ |
- |
| Published |
2010 |
2007 |
| JESD-609 Code |
e3 |
e3 |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
3 |
3 |
| Terminal Finish |
Tin (Sn) |
- |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
- |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Terminal Position |
DUAL |
DUAL |
| Terminal Form |
GULL WING |
GULL WING |
| Pin Count |
3 |
3 |
| JESD-30 Code |
R-PDSO-G3 |
- |
| Number of Elements |
1 |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
- |
| Power Dissipation-Max |
275mW Ta |
300mW Tj |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
N-Channel |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
2.5 Ω @ 240mA, 10V |
| Vgs(th) (Max) @ Id |
2.1V @ 250μA |
2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
26.7pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
310mA Ta |
260mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.6nC @ 4.5V |
0.81nC @ 5V |
| Drain to Source Voltage (Vdss) |
60V |
- |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
4.5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Drain Current-Max (Abs) (ID) |
0.31A |
0.26A |
| Pulsed Drain Current-Max (IDM) |
1.2A |
- |
| DS Breakdown Voltage-Min |
60V |
- |
| RoHS Status |
ROHS3 Compliant |
RoHS Compliant |
| Lifecycle Status |
- |
LAST SHIPMENTS (Last Updated: 1 week ago) |
| Contact Plating |
- |
Tin |
| Number of Pins |
- |
3 |
| Pbfree Code |
- |
yes |
| ECCN Code |
- |
EAR99 |
| Subcategory |
- |
FET General Purpose Power |
| Peak Reflow Temperature (Cel) |
- |
260 |
| Time@Peak Reflow Temperature-Max (s) |
- |
40 |
| Qualification Status |
- |
Not Qualified |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
300mW |
| Turn On Delay Time |
- |
1.7 ns |
| Rise Time |
- |
1.2ns |
| Fall Time (Typ) |
- |
1.2 ns |
| Turn-Off Delay Time |
- |
4.8 ns |
| Continuous Drain Current (ID) |
- |
310mA |
| Gate to Source Voltage (Vgs) |
- |
20V |
| Drain to Source Breakdown Voltage |
- |
60V |
| Lead Free |
- |
Lead Free |
| Submit RFQ: |
Submit |
Submit |
