Nexperia USA Inc. 2N7002BKW,115

Name: 2N7002BKW,115
Brand: Nexperia USA Inc.
SKU: 2478942-2N7002BKW,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7002BKW,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478942-2N7002BKW,115

Description:: MOSFET N-CH 60V 310MA SOT323

ECAD Model:

Datasheet:: 2N7002BKW,115

Specifications

Nexperia USA Inc. 2N7002BKW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. 2N7002BKW,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
275mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
310mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.31A
Pulsed Drain Current-Max (IDM)
1.2A
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

2N7002BKW,115 Overview
A device's maximal input capacitance is 50pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.31A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 1.2A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

2N7002BKW,115 Features
based on its rated peak drain current 1.2A.
a 60V drain to source voltage (Vdss)

2N7002BKW,115 Applications
There are a lot of Nexperia USA Inc.
2N7002BKW,115 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

2N7002BKW,115 More Descriptions

Transistor MOSFET N-CH 60V 0.31A 3-Pin SOT-323 T/RAvnet Japan
2N7002BKW - 60 V, 310 mA N-channel Trench MOSFET
2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323
Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.31A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 60V, 0.31A, SOT323; Transistor Polarity: N Channel; Continuous Drain Current Id: 310mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 275mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
MOSFET Single N-Channel 60V 300mA

Product Comparison

The three parts on the right have similar specifications to 2N7002BKW,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Contact Plating

Number of Pins

Pbfree Code

ECCN Code

Subcategory

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Reach Compliance Code

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

Mount

Weight

Manufacturer Package Identifier

Resistance

Number of Channels

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
2N7002BKW,115

Nexperia USA Inc.

4 Weeks

Surface Mount

SC-70, SOT-323

YES

SILICON

150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

3

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

275mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

310mA Ta

0.6nC @ 4.5V

60V

10V

±20V

0.31A

1.2A

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002ET3G

ON Semiconductor

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2007

e3

Obsolete

1 (Unlimited)

3

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

3

-

1

-

300mW Tj

ENHANCEMENT MODE

N-Channel

SWITCHING

2.5 Ω @ 240mA, 10V

2.5V @ 250μA

26.7pF @ 25V

260mA Ta

0.81nC @ 5V

-

4.5V 10V

±20V

0.26A

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 1 week ago)

Tin

3

yes

EAR99

FET General Purpose Power

260

40

Not Qualified

Single

300mW

1.7 ns

1.2ns

1.2 ns

4.8 ns

310mA

20V

60V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7002BKW,115 vs 2N7002ET3G
2N7000RLRMG

ON Semiconductor

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Box (TB)

-

-

e1

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

-

MOSFET (Metal Oxide)

BOTTOM

-

3

O-PBCY-T3

1

SINGLE WITH BUILT-IN DIODE

350mW Tc

ENHANCEMENT MODE

N-Channel

-

5 Ω @ 500mA, 10V

3V @ 1mA

60pF @ 25V

200mA Ta

-

60V

4.5V 10V

±20V

0.2A

-

60V

ROHS3 Compliant

-

-

-

yes

-

-

260

40

COMMERCIAL

-

-

-

-

-

-

-

-

-

-

unknown

5Ohm

5 pF

-

-

-

-

-

-

-

-

-

-

2N7002BKW,115 vs 2N7000RLRMG
2N7002E-7-F

Diodes Incorporated

19 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2013

e3

Active

1 (Unlimited)

3

Matte Tin (Sn)

LOW THRESHOLD

MOSFET (Metal Oxide)

DUAL

GULL WING

3

-

1

-

370mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

3 Ω @ 250mA, 10V

2.5V @ 250μA

50pF @ 25V

250mA Ta

0.22nC @ 4.5V

-

4.5V 10V

±20V

0.24A

-

-

ROHS3 Compliant

-

-

3

yes

EAR99

FET General Purpose Powers

260

40

-

Single

540mW

7 ns

-

-

11 ns

250mA

20V

60V

Lead Free

-

-

5 pF

Surface Mount

7.994566mg

2N7002E-7-F

4Ohm

1

1mm

2.9mm

1.3mm

No SVHC

No

2N7002BKW,115 vs 2N7002E-7-F