Part Number: NVD5117PLT4G-VF01 vs NVD5490NLT4G-VF01
Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | ||
---|---|---|
Part Number: | NVD5117PLT4G-VF01 | NVD5490NLT4G-VF01 |
Manufacturer: | ON Semiconductor | ON Semiconductor |
Description: | MOSFET P-CH 60V 61A DPAK | MOSFET N-CH 60V 17A DPAK |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) | ACTIVE (Last Updated: 1 week ago) |
Factory Lead Time | 7 Weeks | 22 Weeks |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads Tab), SC-63 | TO-252-3, DPak (2 Leads Tab), SC-63 |
Surface Mount | YES | YES |
Transistor Element Material | SILICON | SILICON |
Operating Temperature | -55°C~175°C TJ | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
JESD-609 Code | e3 | e3 |
Pbfree Code | yes | yes |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 2 | 2 |
Terminal Finish | Tin (Sn) | Tin (Sn) |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Terminal Position | SINGLE | SINGLE |
Terminal Form | GULL WING | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | - |
Reach Compliance Code | not_compliant | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
Reference Standard | AEC-Q101 | - |
JESD-30 Code | R-PSSO-G2 | R-PSSO-G2 |
Number of Elements | 1 | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 4.1W Ta 118W Tc | 3.4W Ta 49W Tc |
Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Case Connection | DRAIN | DRAIN |
FET Type | P-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 16m Ω @ 29A, 10V | 64m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V | 365pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta 61A Tc | 5A Ta 17A Tc |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V | 14nC @ 10V |
Drain to Source Voltage (Vdss) | 60V | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 10V |
Vgs (Max) | ±20V | ±20V |
Drain Current-Max (Abs) (ID) | 11A | 17A |
Drain-source On Resistance-Max | 0.022Ohm | 0.085Ohm |
Pulsed Drain Current-Max (IDM) | 419A | 71A |
DS Breakdown Voltage-Min | 60V | 60V |
Avalanche Energy Rating (Eas) | 240 mJ | 41 mJ |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Series | - | Automotive, AEC-Q101 |
Published | - | 2012 |
Submit RFQ: | Submit | Submit |