ON Semiconductor NVD5117PLT4G-VF01
- Part Number:
- NVD5117PLT4G-VF01
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2478257-NVD5117PLT4G-VF01
- Description:
- MOSFET P-CH 60V 61A DPAK
- ECAD Model:
-
- Datasheet:
- NVD5117PLT4G-VF01
ON Semiconductor NVD5117PLT4G-VF01 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVD5117PLT4G-VF01.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time7 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardAEC-Q101
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max4.1W Ta 118W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs16m Ω @ 29A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Ta 61A Tc
- Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)11A
- Drain-source On Resistance-Max0.022Ohm
- Pulsed Drain Current-Max (IDM)419A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)240 mJ
- RoHS StatusROHS3 Compliant
NVD5117PLT4G-VF01 Description
In the United States and/or other countries, onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries. Onsemi retains the right to modify any of the goods listed without additional notice. Onsemi specifically disclaims any and all liability, including without limitation special, consequential, or incidental damages, regarding the suitability of its products for any particular purpose. Onsemi also does not assume any liability arising out of the application or use of any product or circuit. Onsemi neither grants any licenses under its own patent rights nor those of third parties.
NVD5117PLT4G-VF01 Features
Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
NVD5117PLT4G-VF01 Applications
Temperature Measurement Pressure Measurement Flow Meters Factory Automation and Process Control
In the United States and/or other countries, onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries. Onsemi retains the right to modify any of the goods listed without additional notice. Onsemi specifically disclaims any and all liability, including without limitation special, consequential, or incidental damages, regarding the suitability of its products for any particular purpose. Onsemi also does not assume any liability arising out of the application or use of any product or circuit. Onsemi neither grants any licenses under its own patent rights nor those of third parties.
NVD5117PLT4G-VF01 Features
Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
NVD5117PLT4G-VF01 Applications
Temperature Measurement Pressure Measurement Flow Meters Factory Automation and Process Control
NVD5117PLT4G-VF01 More Descriptions
Power MOSFET, P Channel, 60 V, 61 A, 16 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Single P-Channel Power MOSFET -60V, -61A, 16mΩ
Trans MOSFET P-CH 60V 11A Automotive 3-Pin(2 Tab) DPAK T/R
PFET DPAK 60V 61A 16MOHM / REEL ROHS COMPLIANT: YES
Power Field-Effect Transistor, 11A I(D), 60V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET'S - SINGLE MOSFET'S TRANSISTORS;
MOSFET, P-CH, 60V, 61A, 175DEG C, 118W;
- Product that comes on tape, but is not reeled
Power Field-Effect Transistors
Single P-Channel Power MOSFET -60V, -61A, 16mΩ
Trans MOSFET P-CH 60V 11A Automotive 3-Pin(2 Tab) DPAK T/R
PFET DPAK 60V 61A 16MOHM / REEL ROHS COMPLIANT: YES
Power Field-Effect Transistor, 11A I(D), 60V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET'S - SINGLE MOSFET'S TRANSISTORS;
MOSFET, P-CH, 60V, 61A, 175DEG C, 118W;
- Product that comes on tape, but is not reeled
Power Field-Effect Transistors
The three parts on the right have similar specifications to NVD5117PLT4G-VF01.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSeriesPublishedDrain to Source ResistanceView Compare
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NVD5117PLT4G-VF01ACTIVE (Last Updated: 4 days ago)7 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesActive1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PSSO-G21SINGLE WITH BUILT-IN DIODE4.1W Ta 118W TcENHANCEMENT MODEDRAINP-Channel16m Ω @ 29A, 10V2.5V @ 250μA4800pF @ 25V11A Ta 61A Tc85nC @ 10V60V4.5V 10V±20V11A0.022Ohm419A60V240 mJROHS3 Compliant---- -
ACTIVE (Last Updated: 1 week ago)22 WeeksSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)e3yesActive1 (Unlimited)2Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WING-not_compliant--R-PSSO-G21SINGLE WITH BUILT-IN DIODE3.4W Ta 49W TcENHANCEMENT MODEDRAINN-Channel64m Ω @ 9A, 10V2.5V @ 250μA365pF @ 25V5A Ta 17A Tc14nC @ 10V60V4.5V 10V±20V17A0.085Ohm71A60V41 mJROHS3 CompliantAutomotive, AEC-Q1012012-
-
ACTIVE (Last Updated: 3 days ago)16 Weeks-----Tape & Reel (TR)-yesActive1 (Unlimited)------not_compliant----------------------ROHS3 Compliant--2.9mOhm
-
ACTIVE, NOT REC (Last Updated: 4 days ago)10 Weeks-------yesActive------------------------------RoHS Compliant---
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