Part Number: CSD18532Q5B vs CSD17576Q5BT
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | CSD18532Q5B | CSD17576Q5BT |
| Manufacturer: | Texas Instruments | Texas Instruments |
| Description: | 60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm |
| Quantity Available: | Available | Available |
| Datasheets: | csd18532q5b | csd17576q5b |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | ACTIVE (Last Updated: 5 days ago) |
| Factory Lead Time | 8 Weeks | 6 Weeks |
| Contact Plating | Tin | Gold |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| Number of Pins | 8 | 8 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | NexFET™ | NexFET™ |
| JESD-609 Code | e3 | e4 |
| Pbfree Code | yes | yes |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | AVALANCHE RATED |
| Subcategory | FET General Purpose Powers | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | DUAL |
| Terminal Form | NO LEAD | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Reach Compliance Code | not_compliant | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | NOT SPECIFIED |
| Base Part Number | CSD18532 | CSD17576 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | - |
| Power Dissipation-Max | 3.2W Ta 156W Tc | 3.1W Ta 125W Tc |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 3.2W | 3.1W |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 5.8 ns | 5 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 25A, 10V | 2m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA | 1.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 30V | 4430pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | 32nC @ 4.5V |
| Rise Time | 7.2ns | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 10V |
| Vgs (Max) | ±20V | ±20V |
| Fall Time (Typ) | 3.1 ns | 3 ns |
| Turn-Off Delay Time | 22 ns | 23 ns |
| Continuous Drain Current (ID) | 23A | 100A |
| Threshold Voltage | 1.5V | - |
| Gate to Source Voltage (Vgs) | 20V | 20V |
| Drain-source On Resistance-Max | 0.0043Ohm | 0.0029Ohm |
| Drain to Source Breakdown Voltage | 60V | - |
| Pulsed Drain Current-Max (IDM) | 400A | 400A |
| Avalanche Energy Rating (Eas) | 320 mJ | - |
| Max Junction Temperature (Tj) | 150°C | - |
| Height | 1.05mm | - |
| Length | 5mm | 5mm |
| Width | 6mm | 6mm |
| Thickness | 950μm | 950μm |
| REACH SVHC | No SVHC | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Contains Lead | Contains Lead |
| Drain to Source Voltage (Vdss) | - | 30V |
| Drain Current-Max (Abs) (ID) | - | 30A |
| DS Breakdown Voltage-Min | - | 30V |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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CSD17507Q5AT | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm | Compare |
|
CSD17501Q5A | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm | Compare |
|
CSD17581Q5AT | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 4.2 mOhm | Compare |
|
CSD17573Q5BT | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm | Compare |
|
CSD17570Q5B | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm | Compare |
|
CSD17559Q5T | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm | Compare |
