Part Number: CSD18532Q5B vs CSD17382F4
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | CSD18532Q5B | CSD17382F4 |
| Manufacturer: | Texas Instruments | Texas Instruments |
| Description: | 60-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm | 30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection |
| Quantity Available: | Available | Available |
| Datasheets: | csd18532q5b | csd17382f4 |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | ACTIVE (Last Updated: 1 day ago) |
| Factory Lead Time | 8 Weeks | 6 Weeks |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-PowerTDFN | 3-XFDFN |
| Number of Pins | 8 | 3 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | NexFET™ | FemtoFET™ |
| JESD-609 Code | e3 | - |
| Pbfree Code | yes | yes |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 3 |
| ECCN Code | EAR99 | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | - |
| Subcategory | FET General Purpose Powers | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | BOTTOM |
| Terminal Form | NO LEAD | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 | - |
| Reach Compliance Code | not_compliant | - |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | - |
| Base Part Number | CSD18532 | CSD17382 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | 1 |
| Power Dissipation-Max | 3.2W Ta 156W Tc | 500mW Ta |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 3.2W | 500mW |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 5.8 ns | 59 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.2m Ω @ 25A, 10V | 64m Ω @ 500mA, 8V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 30V | 347pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta | 2.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V | 2.7nC @ 4.5V |
| Rise Time | 7.2ns | - |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 1.8V 8V |
| Vgs (Max) | ±20V | - |
| Fall Time (Typ) | 3.1 ns | - |
| Turn-Off Delay Time | 22 ns | 279 ns |
| Continuous Drain Current (ID) | 23A | 2.3A |
| Threshold Voltage | 1.5V | - |
| Gate to Source Voltage (Vgs) | 20V | 10V |
| Drain-source On Resistance-Max | 0.0043Ohm | - |
| Drain to Source Breakdown Voltage | 60V | - |
| Pulsed Drain Current-Max (IDM) | 400A | - |
| Avalanche Energy Rating (Eas) | 320 mJ | - |
| Max Junction Temperature (Tj) | 150°C | 150°C |
| Height | 1.05mm | 350μm |
| Length | 5mm | 1.035mm |
| Width | 6mm | 635μm |
| Thickness | 950μm | - |
| REACH SVHC | No SVHC | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Contains Lead | Lead Free |
| Drain to Source Voltage (Vdss) | - | 30V |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
CSD17318Q2T | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm | Compare |
|
CSD17318Q2 | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm | Compare |
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CSD17311Q5 | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm | Compare |
|
CSD17381F4 | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6 mm, 117 mOhm, gate ESD protection | Compare |
|
CSD17322Q5A | Texas Instruments | 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 12.4 mOhm | Compare |
|
CSD17310 | TI | Compare |
