Part Number: PSMN1R6-40YLC:115 vs PSMN2R0-25YLDX

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Part Number: PSMN1R6-40YLC:115 PSMN2R0-25YLDX
Manufacturer: Nexperia USA Inc. Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A POWERSO8-4 PSMN2R0-25YLD/LFPAK/REEL 7 Q1
Quantity Available: Available Available
Datasheets: - -
Vgs(th) (Max) @ Id: 1.95V @ 1mA -
Vgs (Max): ±20V -
Technology: MOSFET (Metal Oxide) -
Supplier Device Package: LFPAK56, Power-SO8 -
Series: - -
Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 25A, 10V -
Power Dissipation (Max): 288W (Tc) -
Packaging: Tape & Reel (TR) -
Package / Case: SOT-1023, 4-LFPAK -
Operating Temperature: -55°C ~ 150°C (TJ) -
Mounting Type: Surface Mount -
Input Capacitance (Ciss) (Max) @ Vds: 7790pF @ 20V -
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V -
FET Type: N-Channel -
FET Feature: - -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V -
Drain to Source Voltage (Vdss): 40V -
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) -
Factory Lead Time - 12 Weeks
Mount - Surface Mount
Mounting Type - Surface Mount
Package / Case - SC-100, SOT-669
Number of Pins - 5
Supplier Device Package - LFPAK56, Power-SO8
Operating Temperature - -55°C~175°C TJ
Packaging - Tape & Reel (TR)
Published - 2016
Part Status - Active
Moisture Sensitivity Level (MSL) - 1 (Unlimited)
Max Operating Temperature - 175°C
Min Operating Temperature - -55°C
Technology - MOSFET (Metal Oxide)
Power Dissipation-Max - 115W Tc
FET Type - N-Channel
Rds On (Max) @ Id, Vgs - 2.09mOhm @ 25A, 10V
Vgs(th) (Max) @ Id - 2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds - 2485pF @ 12V
Current - Continuous Drain (Id) @ 25°C - 100A Tc
Gate Charge (Qg) (Max) @ Vgs - 34.1nC @ 10V
Drain to Source Voltage (Vdss) - 25V
Drive Voltage (Max Rds On,Min Rds On) - 4.5V 10V
Vgs (Max) - ±20V
Continuous Drain Current (ID) - 100A
Input Capacitance - 2.485nF
FET Feature - Schottky Diode (Body)
Drain to Source Resistance - 1.82mOhm
Rds On Max - 2.09 mΩ
RoHS Status - ROHS3 Compliant
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