Nexperia USA Inc. PSMN1R6-40YLC:115
- Part Number:
- PSMN1R6-40YLC:115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478248-PSMN1R6-40YLC:115
- Description:
- MOSFET N-CH 40V 100A POWERSO8-4
- Datasheet:
- PSMN1R6-40YLC:115
Nexperia USA Inc. PSMN1R6-40YLC:115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN1R6-40YLC:115.
- Vgs(th) (Max) @ Id:1.95V @ 1mA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:LFPAK56, Power-SO8
- Series:-
- Rds On (Max) @ Id, Vgs:1.55 mOhm @ 25A, 10V
- Power Dissipation (Max):288W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:SOT-1023, 4-LFPAK
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:7790pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs:126nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Drain to Source Voltage (Vdss):40V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Images are for reference only.See Product Specifications for product details.If you are interested to buy PSMN1R6-40YLC:115.
PSMN1R6-40YLC:115 More Descriptions
PSMN1R6-40YLC - N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology
Trans MOSFET N-CH 40V 100A 5-Pin(4 Tab) LFPAK T/R
MOSFET N-CH 40V 100A LFPAK-SO8
STANDARD MARKING * REEL PACK, SMD, 7'
Trans MOSFET N-CH 40V 100A 5-Pin(4 Tab) LFPAK T/R
MOSFET N-CH 40V 100A LFPAK-SO8
STANDARD MARKING * REEL PACK, SMD, 7'
The three parts on the right have similar specifications to PSMN1R6-40YLC:115.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Factory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceFET FeatureDrain to Source ResistanceRds On MaxRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPin CountJESD-30 CodeNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningSeriesECCN CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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PSMN1R6-40YLC:1151.95V @ 1mA±20VMOSFET (Metal Oxide)LFPAK56, Power-SO8-1.55 mOhm @ 25A, 10V288W (Tc)Tape & Reel (TR)SOT-1023, 4-LFPAK-55°C ~ 150°C (TJ)Surface Mount7790pF @ 20V126nC @ 10VN-Channel-4.5V, 10V40V100A (Tc)-----------------------------------------------------------------
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------------------12 WeeksSurface MountSurface MountSC-100, SOT-6695LFPAK56, Power-SO8-55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)115W TcN-Channel2.09mOhm @ 25A, 10V2.2V @ 1mA2485pF @ 12V100A Tc34.1nC @ 10V25V4.5V 10V±20V100A2.485nFSchottky Diode (Body)1.82mOhm2.09 mΩROHS3 Compliant----------------------------------
-
------------------26 Weeks-Surface MountSOT-1210, 8-LFPAK338--55°C~175°C TJTape & Reel (TR)2012Active1 (Unlimited)--MOSFET (Metal Oxide)91W TcN-Channel2.9m Ω @ 25A, 10V2.15V @ 1mA2419pF @ 15V70A Tc36.1nC @ 10V-4.5V 10V±20V70A----ROHS3 CompliantYESSILICONe34Tin (Sn)SINGLEGULL WING8R-PSSO-G41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE91WDRAIN17.7 nsSWITCHING30.8ns19.3 ns24.6 ns20V30V523A75 mJNo----------
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--------------------Through HoleTO-247-3---55°C~175°C TJTube1999Obsolete1 (Unlimited)--MOSFET (Metal Oxide)300W TcN-Channel20m Ω @ 25A, 10V4V @ 1mA9537pF @ 25V73A Tc227nC @ 10V150V10V±20V-----ROHS3 CompliantNOSILICONe33Matte Tin (Sn)SINGLE-3R-PSFM-T31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-DRAIN-SWITCHING-----290A707 mJ-TrenchMOS™EAR99FET General Purpose PowerNOT SPECIFIEDunknownNOT SPECIFIEDNot Qualified73A0.02Ohm150V
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