PSMN1R6-40YLC:115

Nexperia USA Inc. PSMN1R6-40YLC:115

Part Number:
PSMN1R6-40YLC:115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478248-PSMN1R6-40YLC:115
Description:
MOSFET N-CH 40V 100A POWERSO8-4
ECAD Model:
Datasheet:
PSMN1R6-40YLC:115

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Specifications
Nexperia USA Inc. PSMN1R6-40YLC:115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PSMN1R6-40YLC:115.
  • Vgs(th) (Max) @ Id:
    1.95V @ 1mA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    LFPAK56, Power-SO8
  • Series:
    -
  • Rds On (Max) @ Id, Vgs:
    1.55 mOhm @ 25A, 10V
  • Power Dissipation (Max):
    288W (Tc)
  • Packaging:
    Tape & Reel (TR)
  • Package / Case:
    SOT-1023, 4-LFPAK
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Surface Mount
  • Input Capacitance (Ciss) (Max) @ Vds:
    7790pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs:
    126nC @ 10V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    4.5V, 10V
  • Drain to Source Voltage (Vdss):
    40V
  • Current - Continuous Drain (Id) @ 25°C:
    100A (Tc)
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy PSMN1R6-40YLC:115.
PSMN1R6-40YLC:115 More Descriptions
PSMN1R6-40YLC - N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology
Trans MOSFET N-CH 40V 100A 5-Pin(4 Tab) LFPAK T/R
MOSFET N-CH 40V 100A LFPAK-SO8
STANDARD MARKING * REEL PACK, SMD, 7'
Product Comparison
The three parts on the right have similar specifications to PSMN1R6-40YLC:115.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    Series
    ECCN Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • PSMN1R6-40YLC:115
    PSMN1R6-40YLC:115
    1.95V @ 1mA
    ±20V
    MOSFET (Metal Oxide)
    LFPAK56, Power-SO8
    -
    1.55 mOhm @ 25A, 10V
    288W (Tc)
    Tape & Reel (TR)
    SOT-1023, 4-LFPAK
    -55°C ~ 150°C (TJ)
    Surface Mount
    7790pF @ 20V
    126nC @ 10V
    N-Channel
    -
    4.5V, 10V
    40V
    100A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R0-25YLDX
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    12 Weeks
    Surface Mount
    Surface Mount
    SC-100, SOT-669
    5
    LFPAK56, Power-SO8
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    115W Tc
    N-Channel
    2.09mOhm @ 25A, 10V
    2.2V @ 1mA
    2485pF @ 12V
    100A Tc
    34.1nC @ 10V
    25V
    4.5V 10V
    ±20V
    100A
    2.485nF
    Schottky Diode (Body)
    1.82mOhm
    2.09 mΩ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN2R9-30MLC,115
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    26 Weeks
    -
    Surface Mount
    SOT-1210, 8-LFPAK33
    8
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    91W Tc
    N-Channel
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    -
    4.5V 10V
    ±20V
    70A
    -
    -
    -
    -
    ROHS3 Compliant
    YES
    SILICON
    e3
    4
    Tin (Sn)
    SINGLE
    GULL WING
    8
    R-PSSO-G4
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    91W
    DRAIN
    17.7 ns
    SWITCHING
    30.8ns
    19.3 ns
    24.6 ns
    20V
    30V
    523A
    75 mJ
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN020-150W,127
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-247-3
    -
    -
    -55°C~175°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    300W Tc
    N-Channel
    20m Ω @ 25A, 10V
    4V @ 1mA
    9537pF @ 25V
    73A Tc
    227nC @ 10V
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    NO
    SILICON
    e3
    3
    Matte Tin (Sn)
    SINGLE
    -
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    290A
    707 mJ
    -
    TrenchMOS™
    EAR99
    FET General Purpose Power
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    Not Qualified
    73A
    0.02Ohm
    150V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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