Part Number: PSMN1R6-40YLC:115 vs PSMN2R9-30MLC,115
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | PSMN1R6-40YLC:115 | PSMN2R9-30MLC,115 |
| Manufacturer: | Nexperia USA Inc. | Nexperia USA Inc. |
| Description: | MOSFET N-CH 40V 100A POWERSO8-4 | MOSFET N-CH 30V 70A LFPAK33 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Vgs(th) (Max) @ Id: | 1.95V @ 1mA | - |
| Vgs (Max): | ±20V | - |
| Technology: | MOSFET (Metal Oxide) | - |
| Supplier Device Package: | LFPAK56, Power-SO8 | - |
| Series: | - | - |
| Rds On (Max) @ Id, Vgs: | 1.55 mOhm @ 25A, 10V | - |
| Power Dissipation (Max): | 288W (Tc) | - |
| Packaging: | Tape & Reel (TR) | - |
| Package / Case: | SOT-1023, 4-LFPAK | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) | - |
| Mounting Type: | Surface Mount | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 7790pF @ 20V | - |
| Gate Charge (Qg) (Max) @ Vgs: | 126nC @ 10V | - |
| FET Type: | N-Channel | - |
| FET Feature: | - | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | - |
| Drain to Source Voltage (Vdss): | 40V | - |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) | - |
| Factory Lead Time | - | 26 Weeks |
| Mounting Type | - | Surface Mount |
| Package / Case | - | SOT-1210, 8-LFPAK33 |
| Surface Mount | - | YES |
| Number of Pins | - | 8 |
| Transistor Element Material | - | SILICON |
| Operating Temperature | - | -55°C~175°C TJ |
| Packaging | - | Tape & Reel (TR) |
| Published | - | 2012 |
| JESD-609 Code | - | e3 |
| Part Status | - | Active |
| Moisture Sensitivity Level (MSL) | - | 1 (Unlimited) |
| Number of Terminations | - | 4 |
| Terminal Finish | - | Tin (Sn) |
| Technology | - | MOSFET (Metal Oxide) |
| Terminal Position | - | SINGLE |
| Terminal Form | - | GULL WING |
| Pin Count | - | 8 |
| JESD-30 Code | - | R-PSSO-G4 |
| Number of Elements | - | 1 |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | - | 91W Tc |
| Operating Mode | - | ENHANCEMENT MODE |
| Power Dissipation | - | 91W |
| Case Connection | - | DRAIN |
| Turn On Delay Time | - | 17.7 ns |
| FET Type | - | N-Channel |
| Transistor Application | - | SWITCHING |
| Rds On (Max) @ Id, Vgs | - | 2.9m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | - | 2.15V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 2419pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | - | 70A Tc |
| Gate Charge (Qg) (Max) @ Vgs | - | 36.1nC @ 10V |
| Rise Time | - | 30.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | - | 4.5V 10V |
| Vgs (Max) | - | ±20V |
| Fall Time (Typ) | - | 19.3 ns |
| Turn-Off Delay Time | - | 24.6 ns |
| Continuous Drain Current (ID) | - | 70A |
| Gate to Source Voltage (Vgs) | - | 20V |
| Max Dual Supply Voltage | - | 30V |
| Pulsed Drain Current-Max (IDM) | - | 523A |
| Avalanche Energy Rating (Eas) | - | 75 mJ |
| Radiation Hardening | - | No |
| RoHS Status | - | ROHS3 Compliant |
| Submit RFQ: | Submit | Submit |
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