Part Number: PSMN1R6-40YLC:115 vs PSMN020-150W,127
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | PSMN1R6-40YLC:115 | PSMN020-150W,127 |
| Manufacturer: | Nexperia USA Inc. | NXP USA Inc. |
| Description: | MOSFET N-CH 40V 100A POWERSO8-4 | MOSFET N-CH 150V 73A SOT429 |
| Quantity Available: | Available | Available |
| Datasheets: | - | PSMN020-150W |
| Vgs(th) (Max) @ Id: | 1.95V @ 1mA | - |
| Vgs (Max): | ±20V | - |
| Technology: | MOSFET (Metal Oxide) | - |
| Supplier Device Package: | LFPAK56, Power-SO8 | - |
| Series: | - | - |
| Rds On (Max) @ Id, Vgs: | 1.55 mOhm @ 25A, 10V | - |
| Power Dissipation (Max): | 288W (Tc) | - |
| Packaging: | Tape & Reel (TR) | - |
| Package / Case: | SOT-1023, 4-LFPAK | - |
| Operating Temperature: | -55°C ~ 150°C (TJ) | - |
| Mounting Type: | Surface Mount | - |
| Input Capacitance (Ciss) (Max) @ Vds: | 7790pF @ 20V | - |
| Gate Charge (Qg) (Max) @ Vgs: | 126nC @ 10V | - |
| FET Type: | N-Channel | - |
| FET Feature: | - | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | - |
| Drain to Source Voltage (Vdss): | 40V | - |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) | - |
| Mounting Type | - | Through Hole |
| Package / Case | - | TO-247-3 |
| Surface Mount | - | NO |
| Transistor Element Material | - | SILICON |
| Operating Temperature | - | -55°C~175°C TJ |
| Packaging | - | Tube |
| Series | - | TrenchMOS™ |
| Published | - | 1999 |
| JESD-609 Code | - | e3 |
| Part Status | - | Obsolete |
| Moisture Sensitivity Level (MSL) | - | 1 (Unlimited) |
| Number of Terminations | - | 3 |
| ECCN Code | - | EAR99 |
| Terminal Finish | - | Matte Tin (Sn) |
| Subcategory | - | FET General Purpose Power |
| Technology | - | MOSFET (Metal Oxide) |
| Terminal Position | - | SINGLE |
| Peak Reflow Temperature (Cel) | - | NOT SPECIFIED |
| Reach Compliance Code | - | unknown |
| Time@Peak Reflow Temperature-Max (s) | - | NOT SPECIFIED |
| Pin Count | - | 3 |
| JESD-30 Code | - | R-PSFM-T3 |
| Qualification Status | - | Not Qualified |
| Number of Elements | - | 1 |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | - | 300W Tc |
| Operating Mode | - | ENHANCEMENT MODE |
| Case Connection | - | DRAIN |
| FET Type | - | N-Channel |
| Transistor Application | - | SWITCHING |
| Rds On (Max) @ Id, Vgs | - | 20m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | - | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | - | 9537pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | - | 73A Tc |
| Gate Charge (Qg) (Max) @ Vgs | - | 227nC @ 10V |
| Drain to Source Voltage (Vdss) | - | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | - | 10V |
| Vgs (Max) | - | ±20V |
| Drain Current-Max (Abs) (ID) | - | 73A |
| Drain-source On Resistance-Max | - | 0.02Ohm |
| Pulsed Drain Current-Max (IDM) | - | 290A |
| DS Breakdown Voltage-Min | - | 150V |
| Avalanche Energy Rating (Eas) | - | 707 mJ |
| RoHS Status | - | ROHS3 Compliant |
| Submit RFQ: | Submit | Submit |
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