Part Number: SI7102DN-T1-GE3 vs SI7120DN-T1-GE3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
|
|---|---|---|
| Part Number: | SI7102DN-T1-GE3 | SI7120DN-T1-GE3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N-CH 12V 35A 1212-8 | MOSFET N-CH 60V 6.3A 1212-8 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 15 Weeks | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Number of Pins | 8 | 8 |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -50°C~150°C TJ | - |
| Packaging | Tape & Reel (TR) | Cut Tape (CT) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2013 | 2014 |
| JESD-609 Code | e3 | e3 |
| Pbfree Code | yes | yes |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 3.8mOhm | - |
| Terminal Finish | Matte Tin (Sn) | PURE MATTE TIN |
| Subcategory | FET General Purpose Powers | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | DUAL |
| Terminal Form | C BEND | C BEND |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 |
| Pin Count | 8 | 8 |
| JESD-30 Code | S-XDSO-C5 | S-XDSO-C5 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | - |
| Power Dissipation-Max | 3.8W Ta 52W Tc | - |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 3.8W | 1.5W |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 27 ns | 14 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 15A, 4.5V | 19m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 6V | - |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc | 6.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 8V | 45nC @ 10V |
| Rise Time | 125ns | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V | - |
| Vgs (Max) | ±8V | - |
| Fall Time (Typ) | 12 ns | 12 ns |
| Turn-Off Delay Time | 53 ns | 50 ns |
| Continuous Drain Current (ID) | 35A | 10A |
| Threshold Voltage | 400mV | 2.5V |
| Gate to Source Voltage (Vgs) | 8V | 20V |
| Drain Current-Max (Abs) (ID) | 25A | 6.3A |
| Drain to Source Breakdown Voltage | 12V | 60V |
| Pulsed Drain Current-Max (IDM) | 60A | 40A |
| Nominal Vgs | 400 mV | - |
| Height | 1.04mm | - |
| Length | 3.3mm | - |
| Width | 3.3mm | - |
| REACH SVHC | Unknown | No SVHC |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Max Operating Temperature | - | 150°C |
| Min Operating Temperature | - | -55°C |
| Max Power Dissipation | - | 1.5W |
| Avalanche Energy Rating (Eas) | - | 24 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
 |
SI7120ADN-T1-GE3 | VISHAY | Compare | |
|
SI7120ADN | SI | Compare | |
|
SI7120DN-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 6.3A 1212-8 | Compare |
|
SI7120ADN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 6A 1212-8 PPAK | Compare |
