SI7102DN-T1-GE3

Vishay Siliconix SI7102DN-T1-GE3

Part Number:
SI7102DN-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2478237-SI7102DN-T1-GE3
Description:
MOSFET N-CH 12V 35A 1212-8
ECAD Model:
Datasheet:
SI7102DN-T1-GE3

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Specifications
Vishay Siliconix SI7102DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7102DN-T1-GE3.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    3.8mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    8
  • JESD-30 Code
    S-XDSO-C5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.8W Ta 52W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    27 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.8m Ω @ 15A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3720pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 8V
  • Rise Time
    125ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    35A
  • Threshold Voltage
    400mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    25A
  • Drain to Source Breakdown Voltage
    12V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Nominal Vgs
    400 mV
  • Height
    1.04mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI7102DN-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3720pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.A device can conduct a maximum continuous current of [25A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 400mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

SI7102DN-T1-GE3 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a threshold voltage of 400mV


SI7102DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7102DN-T1-GE3 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI7102DN-T1-GE3 More Descriptions
Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8
Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Product Comparison
The three parts on the right have similar specifications to SI7102DN-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Avalanche Energy Rating (Eas)
    Drain to Source Voltage (Vdss)
    Configuration
    View Compare
  • SI7102DN-T1-GE3
    SI7102DN-T1-GE3
    15 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    3.8mOhm
    Matte Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    1
    3.8W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    27 ns
    N-Channel
    SWITCHING
    3.8m Ω @ 15A, 4.5V
    1V @ 250μA
    3720pF @ 6V
    35A Tc
    110nC @ 8V
    125ns
    2.5V 4.5V
    ±8V
    12 ns
    53 ns
    35A
    400mV
    8V
    25A
    12V
    60A
    400 mV
    1.04mm
    3.3mm
    3.3mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SI7120DN-T1-GE3
    -
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    -
    -
    Cut Tape (CT)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    PURE MATTE TIN
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    S-XDSO-C5
    1
    -
    -
    Single
    ENHANCEMENT MODE
    1.5W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    19m Ω @ 10A, 10V
    3.5V @ 250μA
    -
    6.3A Ta
    45nC @ 10V
    12ns
    -
    -
    12 ns
    50 ns
    10A
    2.5V
    20V
    6.3A
    60V
    40A
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    150°C
    -55°C
    1.5W
    24 mJ
    -
    -
  • SI7113DN-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    PowerPAK® 1212-8
    8
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    134MOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    -
    -
    8
    S-PDSO-F5
    1
    1
    3.7W Ta 52W Tc
    Single
    ENHANCEMENT MODE
    3.7W
    DRAIN
    30 ns
    P-Channel
    SWITCHING
    134m Ω @ 4A, 10V
    3V @ 250μA
    1480pF @ 50V
    13.2A Tc
    55nC @ 10V
    110ns
    4.5V 10V
    ±20V
    40 ns
    51 ns
    -13.2A
    -
    20V
    -
    -100V
    20A
    -
    1.04mm
    3.05mm
    3.05mm
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    100V
    -
  • SI7160DP-T1-E3
    -
    Surface Mount
    Surface Mount
    PowerPAK® SO-8
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    8.7MOhm
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    C BEND
    260
    30
    8
    R-PDSO-C5
    1
    -
    5W Ta 27.7W Tc
    -
    ENHANCEMENT MODE
    5W
    DRAIN
    29 ns
    N-Channel
    SWITCHING
    8.7m Ω @ 15A, 10V
    2.5V @ 250μA
    2970pF @ 15V
    20A Tc
    66nC @ 10V
    115ns
    4.5V 10V
    ±16V
    21 ns
    43 ns
    17.8A
    -
    16V
    -
    30V
    60A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    20 mJ
    -
    SINGLE WITH BUILT-IN DIODE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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