Vishay Siliconix SI7102DN-T1-GE3
- Part Number:
- SI7102DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478237-SI7102DN-T1-GE3
- Description:
- MOSFET N-CH 12V 35A 1212-8
- Datasheet:
- SI7102DN-T1-GE3
Vishay Siliconix SI7102DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI7102DN-T1-GE3.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CasePowerPAK® 1212-8
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance3.8mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count8
- JESD-30 CodeS-XDSO-C5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.8W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.8W
- Case ConnectionDRAIN
- Turn On Delay Time27 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.8m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3720pF @ 6V
- Current - Continuous Drain (Id) @ 25°C35A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 8V
- Rise Time125ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage400mV
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)25A
- Drain to Source Breakdown Voltage12V
- Pulsed Drain Current-Max (IDM)60A
- Nominal Vgs400 mV
- Height1.04mm
- Length3.3mm
- Width3.3mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI7102DN-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3720pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.A device can conduct a maximum continuous current of [25A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 400mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
SI7102DN-T1-GE3 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a threshold voltage of 400mV
SI7102DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7102DN-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3720pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 35A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.A device can conduct a maximum continuous current of [25A] according to its drain current.It is [53 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 400mV.A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
SI7102DN-T1-GE3 Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a threshold voltage of 400mV
SI7102DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7102DN-T1-GE3 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
SI7102DN-T1-GE3 More Descriptions
Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8
Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes
MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
The three parts on the right have similar specifications to SI7102DN-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureMax Power DissipationAvalanche Energy Rating (Eas)Drain to Source Voltage (Vdss)ConfigurationView Compare
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SI7102DN-T1-GE315 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesObsolete1 (Unlimited)5EAR993.8mOhmMatte Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C5113.8W Ta 52W TcSingleENHANCEMENT MODE3.8WDRAIN27 nsN-ChannelSWITCHING3.8m Ω @ 15A, 4.5V1V @ 250μA3720pF @ 6V35A Tc110nC @ 8V125ns2.5V 4.5V±8V12 ns53 ns35A400mV8V25A12V60A400 mV1.04mm3.3mm3.3mmUnknownNoROHS3 CompliantLead Free-------
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-Surface MountSurface MountPowerPAK® 1212-88--Cut Tape (CT)TrenchFET®2014e3yesObsolete1 (Unlimited)5EAR99-PURE MATTE TINFET General Purpose PowersMOSFET (Metal Oxide)DUALC BEND260308S-XDSO-C51--SingleENHANCEMENT MODE1.5WDRAIN14 nsN-ChannelSWITCHING19m Ω @ 10A, 10V3.5V @ 250μA-6.3A Ta45nC @ 10V12ns--12 ns50 ns10A2.5V20V6.3A60V40A----No SVHCNoROHS3 CompliantLead Free150°C-55°C1.5W24 mJ--
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14 WeeksSurface MountSurface MountPowerPAK® 1212-88SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesActive1 (Unlimited)5EAR99134MOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALFLAT--8S-PDSO-F5113.7W Ta 52W TcSingleENHANCEMENT MODE3.7WDRAIN30 nsP-ChannelSWITCHING134m Ω @ 4A, 10V3V @ 250μA1480pF @ 50V13.2A Tc55nC @ 10V110ns4.5V 10V±20V40 ns51 ns-13.2A-20V--100V20A-1.04mm3.05mm3.05mm-NoROHS3 CompliantLead Free----100V-
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-Surface MountSurface MountPowerPAK® SO-88SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2012e3yesObsolete1 (Unlimited)5EAR998.7MOhmMatte Tin (Sn)-MOSFET (Metal Oxide)DUALC BEND260308R-PDSO-C51-5W Ta 27.7W Tc-ENHANCEMENT MODE5WDRAIN29 nsN-ChannelSWITCHING8.7m Ω @ 15A, 10V2.5V @ 250μA2970pF @ 15V20A Tc66nC @ 10V115ns4.5V 10V±16V21 ns43 ns17.8A-16V-30V60A-----NoROHS3 CompliantLead Free---20 mJ-SINGLE WITH BUILT-IN DIODE
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