Part Number: SI7102DN-T1-GE3 vs SI7160DP-T1-E3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SI7102DN-T1-GE3 | SI7160DP-T1-E3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N-CH 12V 35A 1212-8 | MOSFET N-CH 30V 20A PPAK SO-8 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 15 Weeks | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® 1212-8 | PowerPAK® SO-8 |
| Number of Pins | 8 | 8 |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -50°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2013 | 2012 |
| JESD-609 Code | e3 | e3 |
| Pbfree Code | yes | yes |
| Part Status | Obsolete | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 3.8mOhm | 8.7MOhm |
| Terminal Finish | Matte Tin (Sn) | Matte Tin (Sn) |
| Subcategory | FET General Purpose Powers | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | DUAL |
| Terminal Form | C BEND | C BEND |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 |
| Pin Count | 8 | 8 |
| JESD-30 Code | S-XDSO-C5 | R-PDSO-C5 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | - |
| Power Dissipation-Max | 3.8W Ta 52W Tc | 5W Ta 27.7W Tc |
| Element Configuration | Single | - |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 3.8W | 5W |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 27 ns | 29 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 15A, 4.5V | 8.7m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 6V | 2970pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 8V | 66nC @ 10V |
| Rise Time | 125ns | 115ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V | 4.5V 10V |
| Vgs (Max) | ±8V | ±16V |
| Fall Time (Typ) | 12 ns | 21 ns |
| Turn-Off Delay Time | 53 ns | 43 ns |
| Continuous Drain Current (ID) | 35A | 17.8A |
| Threshold Voltage | 400mV | - |
| Gate to Source Voltage (Vgs) | 8V | 16V |
| Drain Current-Max (Abs) (ID) | 25A | - |
| Drain to Source Breakdown Voltage | 12V | 30V |
| Pulsed Drain Current-Max (IDM) | 60A | 60A |
| Nominal Vgs | 400 mV | - |
| Height | 1.04mm | - |
| Length | 3.3mm | - |
| Width | 3.3mm | - |
| REACH SVHC | Unknown | - |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Configuration | - | SINGLE WITH BUILT-IN DIODE |
| Avalanche Energy Rating (Eas) | - | 20 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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SI7160DP | SI | Compare | |
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SI7160DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 20A PPAK SO-8 | Compare |
