Part Number: SI4559ADY-T1-GE3 vs SI4565ADY-T1-E3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SI4559ADY-T1-GE3 | SI4565ADY-T1-E3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N/P-CH 60V 5.3A 8-SOIC | MOSFET N/P-CH 40V 6.6A 8-SOIC |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 14 Weeks | - |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 | 8 |
| Weight | 506.605978mg | - |
| Transistor Element Material | SILICON | - |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2011 | 2011 |
| JESD-609 Code | e3 | - |
| Pbfree Code | yes | - |
| Part Status | Active | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 8 | - |
| ECCN Code | EAR99 | - |
| Resistance | 58MOhm | 39mOhm |
| Subcategory | Other Transistors | - |
| Max Power Dissipation | 3.4W | 2W |
| Terminal Position | DUAL | - |
| Terminal Form | GULL WING | - |
| Peak Reflow Temperature (Cel) | 260 | - |
| Time@Peak Reflow Temperature-Max (s) | 30 | - |
| Base Part Number | SI4559 | SI4565 |
| Pin Count | 8 | - |
| Number of Elements | 2 | 2 |
| Number of Channels | 2 | - |
| Operating Mode | ENHANCEMENT MODE | - |
| Power Dissipation | 2W | 2W |
| Turn On Delay Time | 30 ns | 21 ns |
| Power - Max | 3.1W 3.4W | 3.1W |
| FET Type | N and P-Channel | N and P-Channel |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 4.3A, 10V | 39mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V | 625pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A 3.9A | 6.6A 5.6A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | 22nC @ 10V |
| Rise Time | 70ns | 90ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | - |
| Fall Time (Typ) | 30 ns | 56 ns |
| Turn-Off Delay Time | 40 ns | 44 ns |
| Continuous Drain Current (ID) | 4.5A | 4.5A |
| Gate to Source Voltage (Vgs) | 20V | 16V |
| Drain Current-Max (Abs) (ID) | 4.3A | - |
| Drain to Source Breakdown Voltage | 60V | 40V |
| Avalanche Energy Rating (Eas) | 6.1 mJ | - |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | - |
| FET Feature | Logic Level Gate | Standard |
| Height | 1.55mm | - |
| Length | 5mm | - |
| Width | 4mm | - |
| Radiation Hardening | No | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Supplier Device Package | - | 8-SO |
| Max Operating Temperature | - | 150°C |
| Min Operating Temperature | - | -55°C |
| Element Configuration | - | Dual |
| Drain to Source Voltage (Vdss) | - | 40V |
| Input Capacitance | - | 625pF |
| Drain to Source Resistance | - | 54mOhm |
| Rds On Max | - | 39 mΩ |
| Submit RFQ: | Submit | Submit |
