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SI4559ADY-T1-GE3

Vishay Siliconix SI4559ADY-T1-GE3

Part Number:
SI4559ADY-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2473273-SI4559ADY-T1-GE3
Description:
MOSFET N/P-CH 60V 5.3A 8-SOIC
ECAD Model:
Datasheet:
SI4559ADY-T1-GE3

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Specifications
Vishay Siliconix SI4559ADY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4559ADY-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    506.605978mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    58MOhm
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    3.4W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    SI4559
  • Pin Count
    8
  • Number of Elements
    2
  • Number of Channels
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    30 ns
  • Power - Max
    3.1W 3.4W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 4.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    665pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A 3.9A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    70ns
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    4.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4.3A
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    6.1 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.55mm
  • Length
    5mm
  • Width
    4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI4559ADY-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI4559ADY-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI4559ADY-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI4559ADY-T1-GE3 More Descriptions
Si4559ADY Series 60 V 5.3A/3.9A 665 pF N/P-Channel Mosfet - SOIC-8
Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P CH, 60V, 5.3A, SOIC; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 5.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
NPN/PNP MOSFET, 60V, SOIC, FULL REEL; Channel Type:N and P Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:5.3A; No. of Pins:8Pins; Product Range:- RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to SI4559ADY-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    FET Technology
    FET Feature
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Threshold Voltage
    REACH SVHC
    Terminal Finish
    Pulsed Drain Current-Max (IDM)
    View Compare
  • SI4559ADY-T1-GE3
    SI4559ADY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    506.605978mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    58MOhm
    Other Transistors
    3.4W
    DUAL
    GULL WING
    260
    30
    SI4559
    8
    2
    2
    ENHANCEMENT MODE
    2W
    30 ns
    3.1W 3.4W
    N and P-Channel
    SWITCHING
    58m Ω @ 4.3A, 10V
    3V @ 250μA
    665pF @ 15V
    5.3A 3.9A
    20nC @ 10V
    70ns
    N-CHANNEL AND P-CHANNEL
    30 ns
    40 ns
    4.5A
    20V
    4.3A
    60V
    6.1 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI4565ADY-T1-E3
    SI4565ADY-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2011
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    39mOhm
    -
    2W
    -
    -
    -
    -
    SI4565
    -
    2
    -
    -
    2W
    21 ns
    3.1W
    N and P-Channel
    -
    39mOhm @ 5A, 10V
    2.2V @ 250μA
    625pF @ 20V
    6.6A 5.6A
    22nC @ 10V
    90ns
    -
    56 ns
    44 ns
    4.5A
    16V
    -
    40V
    -
    -
    Standard
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    8-SO
    150°C
    -55°C
    Dual
    40V
    625pF
    54mOhm
    39 mΩ
    -
    -
    -
    -
    SI4559ADY-T1-GE3 vs SI4565ADY-T1-E3
  • SI4599DY-T1-GE3
    SI4599DY-T1-GE3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    540.001716mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    -
    Active
    1 (Unlimited)
    8
    EAR99
    45mOhm
    -
    3.1W
    DUAL
    GULL WING
    260
    40
    SI4599
    8
    2
    2
    ENHANCEMENT MODE
    3W
    44 ns
    3W 3.1W
    N and P-Channel
    SWITCHING
    35.5m Ω @ 5A, 10V
    3V @ 250μA
    640pF @ 20V
    6.8A 5.8A
    20nC @ 10V
    33ns
    N-CHANNEL AND P-CHANNEL
    13 ns
    30 ns
    6.8A
    20V
    5.6A
    40V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.55mm
    5mm
    4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    1.4V
    Unknown
    -
    -
    SI4559ADY-T1-GE3 vs SI4599DY-T1-GE3
  • SI4542DY-T1-E3
    SI4542DY-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2014
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    25mOhm
    Other Transistors
    2W
    -
    GULL WING
    260
    30
    SI4542
    8
    2
    -
    ENHANCEMENT MODE
    2W
    -
    -
    N and P-Channel
    -
    25m Ω @ 6.9A, 10V
    1V @ 250μA (Min)
    -
    -
    50nC @ 10V
    10ns
    N-CHANNEL AND P-CHANNEL
    25 ns
    55 ns
    5.7A
    20V
    6.9A
    30V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    Dual
    -
    -
    -
    -
    -
    -
    Matte Tin (Sn)
    40A
    SI4559ADY-T1-GE3 vs SI4542DY-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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