| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
 |
|
| Part Number: |
SI4559ADY-T1-GE3 |
SI4599DY-T1-GE3 |
| Manufacturer: |
Vishay Siliconix |
Vishay Siliconix |
| Description: |
MOSFET N/P-CH 60V 5.3A 8-SOIC |
MOSFET N/P-CH 40V 6.8A 8SOIC |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
14 Weeks |
14 Weeks |
| Contact Plating |
Tin |
Tin |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
8 |
| Weight |
506.605978mg |
540.001716mg |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Series |
TrenchFET® |
TrenchFET® |
| Published |
2011 |
2014 |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
- |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
8 |
8 |
| ECCN Code |
EAR99 |
EAR99 |
| Resistance |
58MOhm |
45mOhm |
| Subcategory |
Other Transistors |
- |
| Max Power Dissipation |
3.4W |
3.1W |
| Terminal Position |
DUAL |
DUAL |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
40 |
| Base Part Number |
SI4559 |
SI4599 |
| Pin Count |
8 |
8 |
| Number of Elements |
2 |
2 |
| Number of Channels |
2 |
2 |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Power Dissipation |
2W |
3W |
| Turn On Delay Time |
30 ns |
44 ns |
| Power - Max |
3.1W 3.4W |
3W 3.1W |
| FET Type |
N and P-Channel |
N and P-Channel |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
58m Ω @ 4.3A, 10V |
35.5m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
665pF @ 15V |
640pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C |
5.3A 3.9A |
6.8A 5.8A |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
20nC @ 10V |
| Rise Time |
70ns |
33ns |
| Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL |
N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) |
30 ns |
13 ns |
| Turn-Off Delay Time |
40 ns |
30 ns |
| Continuous Drain Current (ID) |
4.5A |
6.8A |
| Gate to Source Voltage (Vgs) |
20V |
20V |
| Drain Current-Max (Abs) (ID) |
4.3A |
5.6A |
| Drain to Source Breakdown Voltage |
60V |
40V |
| Avalanche Energy Rating (Eas) |
6.1 mJ |
- |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Logic Level Gate |
Logic Level Gate |
| Height |
1.55mm |
1.55mm |
| Length |
5mm |
5mm |
| Width |
4mm |
4mm |
| Radiation Hardening |
No |
No |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Threshold Voltage |
- |
1.4V |
| REACH SVHC |
- |
Unknown |
| Submit RFQ: |
Submit |
Submit |
