Part Number: SI4559ADY-T1-GE3 vs SI4542DY-T1-E3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SI4559ADY-T1-GE3 | SI4542DY-T1-E3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N/P-CH 60V 5.3A 8-SOIC | MOSFET N/P-CH 30V 8-SOIC |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 14 Weeks | - |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 | 8 |
| Weight | 506.605978mg | - |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2011 | 2014 |
| JESD-609 Code | e3 | e3 |
| Pbfree Code | yes | yes |
| Part Status | Active | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 8 | 8 |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 58MOhm | 25mOhm |
| Subcategory | Other Transistors | Other Transistors |
| Max Power Dissipation | 3.4W | 2W |
| Terminal Position | DUAL | - |
| Terminal Form | GULL WING | GULL WING |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 | 30 |
| Base Part Number | SI4559 | SI4542 |
| Pin Count | 8 | 8 |
| Number of Elements | 2 | 2 |
| Number of Channels | 2 | - |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 2W | 2W |
| Turn On Delay Time | 30 ns | - |
| Power - Max | 3.1W 3.4W | - |
| FET Type | N and P-Channel | N and P-Channel |
| Transistor Application | SWITCHING | - |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 4.3A, 10V | 25m Ω @ 6.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA | 1V @ 250μA (Min) |
| Input Capacitance (Ciss) (Max) @ Vds | 665pF @ 15V | - |
| Current - Continuous Drain (Id) @ 25°C | 5.3A 3.9A | - |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V | 50nC @ 10V |
| Rise Time | 70ns | 10ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 30 ns | 25 ns |
| Turn-Off Delay Time | 40 ns | 55 ns |
| Continuous Drain Current (ID) | 4.5A | 5.7A |
| Gate to Source Voltage (Vgs) | 20V | 20V |
| Drain Current-Max (Abs) (ID) | 4.3A | 6.9A |
| Drain to Source Breakdown Voltage | 60V | 30V |
| Avalanche Energy Rating (Eas) | 6.1 mJ | - |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Height | 1.55mm | - |
| Length | 5mm | - |
| Width | 4mm | - |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Terminal Finish | - | Matte Tin (Sn) |
| Element Configuration | - | Dual |
| Pulsed Drain Current-Max (IDM) | - | 40A |
| Submit RFQ: | Submit | Submit |
