| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
FDC6301N |
FDC6303N |
| Manufacturer: |
Fairchild/ON Semiconductor |
Fairchild/ON Semiconductor |
| Description: |
MOSFET 2N-CH 25V 0.22A SSOT6 |
MOSFET 2N-CH 25V 0.68A SSOT6 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Lifecycle Status |
ACTIVE (Last Updated: 1 day ago) |
ACTIVE (Last Updated: 1 day ago) |
| Factory Lead Time |
10 Weeks |
10 Weeks |
| Contact Plating |
Tin |
- |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins |
6 |
6 |
| Weight |
36mg |
36mg |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
1997 |
1997 |
| JESD-609 Code |
e3 |
e3 |
| Pbfree Code |
yes |
yes |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
6 |
| Termination |
SMD/SMT |
SMD/SMT |
| ECCN Code |
EAR99 |
EAR99 |
| Resistance |
4Ohm |
450mOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
LOGIC LEVEL COMPATIBLE |
| Subcategory |
FET General Purpose Power |
FET General Purpose Power |
| Voltage - Rated DC |
25V |
25V |
| Max Power Dissipation |
900mW |
900mW |
| Terminal Form |
GULL WING |
GULL WING |
| Current Rating |
220mA |
680mA |
| Number of Elements |
2 |
2 |
| Element Configuration |
Dual |
Dual |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Power Dissipation |
900mW |
900mW |
| Turn On Delay Time |
5 ns |
3 ns |
| Power - Max |
700mW |
700mW |
| FET Type |
2 N-Channel (Dual) |
2 N-Channel (Dual) |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
4 Ω @ 400mA, 4.5V |
450m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
9.5pF @ 10V |
50pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs |
0.7nC @ 4.5V |
2.3nC @ 4.5V |
| Rise Time |
4.5ns |
8.5ns |
| Fall Time (Typ) |
4.5 ns |
13 ns |
| Turn-Off Delay Time |
4 ns |
17 ns |
| Continuous Drain Current (ID) |
220mA |
680mA |
| Threshold Voltage |
850mV |
800mV |
| Gate to Source Voltage (Vgs) |
8V |
8V |
| Drain to Source Breakdown Voltage |
25V |
25V |
| Dual Supply Voltage |
25V |
25V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Logic Level Gate |
Logic Level Gate |
| Nominal Vgs |
850 mV |
800 mV |
| Height |
1mm |
1.1mm |
| Length |
3mm |
3mm |
| Width |
1.7mm |
1.7mm |
| REACH SVHC |
No SVHC |
No SVHC |
| Radiation Hardening |
No |
No |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Terminal Finish |
- |
Tin (Sn) |
| Number of Channels |
- |
2 |
| Max Junction Temperature (Tj) |
- |
150°C |
| Submit RFQ: |
Submit |
Submit |
