Fairchild/ON Semiconductor FDC6301N
- Part Number:
- FDC6301N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473260-FDC6301N
- Description:
- MOSFET 2N-CH 25V 0.22A SSOT6
- Datasheet:
- FDC6301N
Fairchild/ON Semiconductor FDC6301N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6301N.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance4Ohm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC25V
- Max Power Dissipation900mW
- Terminal FormGULL WING
- Current Rating220mA
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation900mW
- Turn On Delay Time5 ns
- Power - Max700mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4 Ω @ 400mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Rise Time4.5ns
- Fall Time (Typ)4.5 ns
- Turn-Off Delay Time4 ns
- Continuous Drain Current (ID)220mA
- Threshold Voltage850mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage25V
- Dual Supply Voltage25V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs850 mV
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC6301N Description
These dual N-channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. This device is specially designed for low-voltage applications as a substitute for digital transistors. Because there is no need for bias resistors, these N-channel FET can replace several digital transistors with various bias resistors.
FDC6301N Features 25 V, 0.22 A continuous, 0.5 A Peak RDS(ON) = 5 |? @ VGS= 2.7 V RDS(ON) = 4 |? @ VGS= 4.5 V Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
FDC6301N Applications This product is general usage and suitable for many different applications.
These dual N-channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. This device is specially designed for low-voltage applications as a substitute for digital transistors. Because there is no need for bias resistors, these N-channel FET can replace several digital transistors with various bias resistors.
FDC6301N Features 25 V, 0.22 A continuous, 0.5 A Peak RDS(ON) = 5 |? @ VGS= 2.7 V RDS(ON) = 4 |? @ VGS= 4.5 V Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
FDC6301N Applications This product is general usage and suitable for many different applications.
FDC6301N More Descriptions
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin TSOT-23 T/R - Tape and Reel
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:25V; On
Chip Resistor - Surface Mount 2Ohm 1206 (3216 Metric) ±1% ±200ppm/°C Thick Film Digi-Reel® 2 1 (Unlimited) ERJ Res Thick Film 1206 2 Ohm 1% 1/4W ±200ppm/°C Molded SMD Punched Carrier T/R
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:25V; On
Chip Resistor - Surface Mount 2Ohm 1206 (3216 Metric) ±1% ±200ppm/°C Thick Film Digi-Reel® 2 1 (Unlimited) ERJ Res Thick Film 1206 2 Ohm 1% 1/4W ±200ppm/°C Molded SMD Punched Carrier T/R
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
The three parts on the right have similar specifications to FDC6301N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyFET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSeriesCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Number of ChannelsPolarity/Channel TypeMax Junction Temperature (Tj)Terminal FinishView Compare
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FDC6301NACTIVE (Last Updated: 1 day ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)6SMD/SMTEAR994OhmLOGIC LEVEL COMPATIBLEFET General Purpose Power25V900mWGULL WING220mA2DualENHANCEMENT MODE900mW5 ns700mW2 N-Channel (Dual)SWITCHING4 Ω @ 400mA, 4.5V1.5V @ 250μA9.5pF @ 10V0.7nC @ 4.5V4.5ns4.5 ns4 ns220mA850mV8V25V25VMETAL-OXIDE SEMICONDUCTORLogic Level Gate850 mV1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free---------
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----Surface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)---------------900mW2 P-Channel (Dual)-44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V14nC @ 4.5V---------Logic Level Gate--------SuperSOT™-6PowerTrench®5A20V----
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)6-EAR9995MOhm-Other Transistors-960mWGULL WING2.5A2DualENHANCEMENT MODE960mW4.5 ns700mWN and P-ChannelSWITCHING95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V6.6nC @ 10V13ns13 ns11 ns2.5A1.8V25V-30V-METAL-OXIDE SEMICONDUCTORLogic Level Gate1.8 V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-PowerTrench®2.5A 2A30V2N-CHANNEL AND P-CHANNEL150°C-
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ACTIVE (Last Updated: 1 day ago)10 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)6SMD/SMTEAR99450mOhmLOGIC LEVEL COMPATIBLEFET General Purpose Power25V900mWGULL WING680mA2DualENHANCEMENT MODE900mW3 ns700mW2 N-Channel (Dual)SWITCHING450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V2.3nC @ 4.5V8.5ns13 ns17 ns680mA800mV8V25V25VMETAL-OXIDE SEMICONDUCTORLogic Level Gate800 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free----2-150°CTin (Sn)
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