FDC6301N

Fairchild/ON Semiconductor FDC6301N

Part Number:
FDC6301N
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2473260-FDC6301N
Description:
MOSFET 2N-CH 25V 0.22A SSOT6
ECAD Model:
Datasheet:
FDC6301N

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Specifications
Fairchild/ON Semiconductor FDC6301N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6301N.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    36mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    4Ohm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    25V
  • Max Power Dissipation
    900mW
  • Terminal Form
    GULL WING
  • Current Rating
    220mA
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    900mW
  • Turn On Delay Time
    5 ns
  • Power - Max
    700mW
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4 Ω @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9.5pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    0.7nC @ 4.5V
  • Rise Time
    4.5ns
  • Fall Time (Typ)
    4.5 ns
  • Turn-Off Delay Time
    4 ns
  • Continuous Drain Current (ID)
    220mA
  • Threshold Voltage
    850mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    25V
  • Dual Supply Voltage
    25V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    850 mV
  • Height
    1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC6301N            Description
These dual N-channel logic level enhanced mode field effect transistors are produced using proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize on-resistance. This device is specially designed for low-voltage applications as a substitute for digital transistors. Because there is no need for bias resistors, these N-channel FET can replace several digital transistors with various bias resistors.
FDC6301N           Features   25 V, 0.22 A continuous, 0.5 A Peak RDS(ON) = 5 |? @ VGS= 2.7 V RDS(ON) = 4 |? @ VGS= 4.5 V Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
FDC6301N            Applications This product is general usage and suitable for many different applications.      

FDC6301N More Descriptions
Transistor MOSFET Array Dual N-CH 25V 0.22A 6-Pin TSOT-23 T/R - Tape and Reel
ON SEMICONDUCTOR - FDC6301N - Dual MOSFET, Dual N Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:25V; On
Chip Resistor - Surface Mount 2Ohm 1206 (3216 Metric) ±1% ±200ppm/°C Thick Film Digi-Reel® 2 1 (Unlimited) ERJ Res Thick Film 1206 2 Ohm 1% 1/4W ±200ppm/°C Molded SMD Punched Carrier T/R
MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 850mV; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.
Product Comparison
The three parts on the right have similar specifications to FDC6301N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Current Rating
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    FET Technology
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Number of Channels
    Polarity/Channel Type
    Max Junction Temperature (Tj)
    Terminal Finish
    View Compare
  • FDC6301N
    FDC6301N
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    4Ohm
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    25V
    900mW
    GULL WING
    220mA
    2
    Dual
    ENHANCEMENT MODE
    900mW
    5 ns
    700mW
    2 N-Channel (Dual)
    SWITCHING
    4 Ω @ 400mA, 4.5V
    1.5V @ 250μA
    9.5pF @ 10V
    0.7nC @ 4.5V
    4.5ns
    4.5 ns
    4 ns
    220mA
    850mV
    8V
    25V
    25V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    850 mV
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDC6036P_F077
    -
    -
    -
    -
    Surface Mount
    6-SSOT Flat-lead, SuperSOT™-6 FLMP
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    900mW
    2 P-Channel (Dual)
    -
    44mOhm @ 5A, 4.5V
    1.5V @ 250μA
    992pF @ 10V
    14nC @ 4.5V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    -
    -
    SuperSOT™-6
    PowerTrench®
    5A
    20V
    -
    -
    -
    -
  • FDC6333C
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    -
    EAR99
    95MOhm
    -
    Other Transistors
    -
    960mW
    GULL WING
    2.5A
    2
    Dual
    ENHANCEMENT MODE
    960mW
    4.5 ns
    700mW
    N and P-Channel
    SWITCHING
    95m Ω @ 2.5A, 10V
    3V @ 250μA
    282pF @ 15V
    6.6nC @ 10V
    13ns
    13 ns
    11 ns
    2.5A
    1.8V
    25V
    -30V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.8 V
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    PowerTrench®
    2.5A 2A
    30V
    2
    N-CHANNEL AND P-CHANNEL
    150°C
    -
  • FDC6303N
    ACTIVE (Last Updated: 1 day ago)
    10 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    e3
    yes
    Active
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    450mOhm
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    25V
    900mW
    GULL WING
    680mA
    2
    Dual
    ENHANCEMENT MODE
    900mW
    3 ns
    700mW
    2 N-Channel (Dual)
    SWITCHING
    450m Ω @ 500mA, 4.5V
    1.5V @ 250μA
    50pF @ 10V
    2.3nC @ 4.5V
    8.5ns
    13 ns
    17 ns
    680mA
    800mV
    8V
    25V
    25V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    800 mV
    1.1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    2
    -
    150°C
    Tin (Sn)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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