| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
PMGD280UN,115 |
PMGD400UN,115 |
| Manufacturer: |
Nexperia USA Inc. |
NXP USA Inc. |
| Description: |
MOSFET 2N-CH 20V 0.87A 6TSSOP |
MOSFET 2N-CH 30V 0.71A 6TSSOP |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
4 Weeks |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
6-TSSOP, SC-88, SOT-363 |
| Surface Mount |
YES |
YES |
| Number of Pins |
6 |
- |
| Transistor Element Material |
SILICON |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Series |
TrenchMOS™ |
TrenchMOS™ |
| Published |
1997 |
1997 |
| JESD-609 Code |
e3 |
e3 |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
6 |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
Tin (Sn) |
Tin (Sn) |
| HTS Code |
8541.29.00.75 |
8541.29.00.75 |
| Terminal Form |
GULL WING |
GULL WING |
| Pin Count |
6 |
6 |
| Number of Elements |
2 |
2 |
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Power Dissipation |
400mW |
- |
| Power - Max |
400mW |
410mW |
| FET Type |
2 N-Channel (Dual) |
2 N-Channel (Dual) |
| Transistor Application |
SWITCHING |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
340m Ω @ 200mA, 4.5V |
480m Ω @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
45pF @ 20V |
43pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
0.89nC @ 4.5V |
0.89nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
20V |
30V |
| Continuous Drain Current (ID) |
870mA |
- |
| Drain Current-Max (Abs) (ID) |
0.87A |
0.71A |
| Drain-source On Resistance-Max |
0.34Ohm |
0.48Ohm |
| DS Breakdown Voltage-Min |
20V |
30V |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| FET Feature |
Logic Level Gate |
Logic Level Gate |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Subcategory |
- |
FET General Purpose Power |
| Peak Reflow Temperature (Cel) |
- |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
- |
NOT SPECIFIED |
| JESD-30 Code |
- |
R-PDSO-G6 |
| Qualification Status |
- |
Not Qualified |
| Current - Continuous Drain (Id) @ 25°C |
- |
710mA |
| Power Dissipation-Max (Abs) |
- |
0.41W |
| Submit RFQ: |
Submit |
Submit |
