Part Number: RN1966FE(TE85L,F) vs RN1905,LF(CT

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Part Number: RN1966FE(TE85L,F) RN1905,LF(CT
Manufacturer: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.2W US6
Quantity Available: Available Available
Datasheets: RN1961-66FE RN1901-06
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON -
Packaging Cut Tape (CT) Tape & Reel (TR)
Published 2014 2014
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal -
Max Power Dissipation 100mW 200mW
Number of Elements 2 -
Polarity NPN NPN
Element Configuration Dual -
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV 300mV
Max Collector Current 100mA 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V 50V
Max Breakdown Voltage 50V 50V
Frequency - Transition 250MHz 250MHz
Emitter Base Voltage (VEBO) 5V 5V
hFE Min 80 80
Resistor - Base (R1) 4.7k Ω 2.2kOhms
Continuous Collector Current 100mA 100mA
Resistor - Emitter Base (R2) 47k Ω 47kOhms
RoHS Status RoHS Compliant RoHS Compliant
Factory Lead Time - 12 Weeks
Supplier Device Package - US6
Weight - 6.010099mg
Power - Max - 200mW
Voltage - Collector Emitter Breakdown (Max) - 50V
Current - Collector (Ic) (Max) - 100mA
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