Toshiba Semiconductor and Storage RN1966FE(TE85L,F)
- Part Number:
- RN1966FE(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461636-RN1966FE(TE85L,F)
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- ECAD Model:
-
- Datasheet:
- RN1961-66FE
Toshiba Semiconductor and Storage RN1966FE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1966FE(TE85L,F).
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation100mW
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min80
- Resistor - Base (R1)4.7k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusRoHS Compliant
RN1966FE(TE85L,F) Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1966FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1966FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1966FE(TE85L,F) or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1966FE(TE85L,F). We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1966FE(TE85L,F) More Descriptions
Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
TRANS 2NPN PREBIAS 0.1W ES6
TRANS 2NPN PREBIAS 0.1W ES6
The three parts on the right have similar specifications to RN1966FE(TE85L,F).
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)SubcategoryMax Power DissipationNumber of ElementsPolarityElement ConfigurationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusSurface MountPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Factory Lead TimeSupplier Device PackageWeightReach Compliance CodeView Compare
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RN1966FE(TE85L,F)Surface MountSurface MountSOT-563, SOT-666SILICONCut Tape (CT)2014Obsolete1 (Unlimited)BIP General Purpose Small Signal100mW2NPNDual2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz5V804.7k Ω100mA47k ΩRoHS Compliant----------- -
-Surface MountSOT-563, SOT-666SILICONTape & Reel (TR)2014Obsolete1 (Unlimited)BIP General Purpose Small Signal-2--2 NPN - Pre-Biased (Dual)--80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA--250MHz--22k Ω-47k ΩRoHS CompliantYES100mWNPN50V100mA0.1W----
-
Surface MountSurface Mount6-TSSOP, SC-88, SOT-363-Tape & Reel (TR)2014Active1 (Unlimited)-200mW-NPN-2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V250MHz5V802.2kOhms100mA47kOhmsRoHS Compliant-200mW-50V100mA-12 WeeksUS66.010099mg-
-
Surface MountSurface MountSOT-563, SOT-666SILICONCut Tape (CT)2014Obsolete1 (Unlimited)BIP General Purpose Small Signal100mW2NPNDual2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V250MHz10V5010k Ω100mA10k ΩRoHS Compliant---------unknown
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