Microsemi Corporation 1N6643US

Name: 1N6643US
Brand: Microsemi Corporation
SKU: 2423141-1N6643US
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N6643US

Manufacturer:: Microsemi Corporation

Ventron No:: 2423141-1N6643US

Description:: DIODE GEN PURP 50V 300MA D5B

ECAD Model:

Datasheet:: 1N6643US

Specifications

Microsemi Corporation 1N6643US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6643US.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
6 Weeks
Contact Plating
Lead, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SQ-MELF, B
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1997
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
METALLURGICALLY BONDED
HTS Code
8541.10.00.70
Terminal Position
END
Terminal Form
WRAP AROUND
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
50nA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Case Connection
ISOLATED
Forward Current
300mA
Operating Temperature - Junction
-65°C~175°C
Output Current-Max
0.3A
Max Reverse Voltage (DC)
50V
Average Rectified Current
300mA
Reverse Recovery Time
20 ns
Max Repetitive Reverse Voltage (Vrrm)
50V
Capacitance @ Vr, F
5pF @ 0V 1MHz
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

1N6643US Overview
The average rectified current for this device is 300mA volts.When the forward current reaches 300mA, it is allowed.As far as output current is concerned, 0.3A is the maximum.

1N6643US Features
an average rectified current of 300mA volts
0.3A is the maximum value

1N6643US Applications
There are a lot of Microsemi Corporation
1N6643US applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N6643US More Descriptions

Rectifier Diode Switching 50V 0.3A 6ns 2-Pin B-MELF Bag
Signal or Computer Diode _ D-5D
1N6643US Series 50 V 300 mA Voidless Hermetically Sealed Switching Diode - D-5B
DIODE SCHOTTKY 1.2KV 20A TO220AC

Product Comparison

The three parts on the right have similar specifications to 1N6643US.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Output Current-Max

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

RoHS Status

Lead Free

Subcategory

Technology

Application

Forward Voltage

Number of Phases

Peak Reverse Current

Peak Non-Repetitive Surge Current

Radiation Hardening

Reach Compliance Code

Reverse Current-Max

Voltage - DC Reverse (Vr) (Max)

View Compare
1N6643US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

6 Weeks

Lead, Tin

Surface Mount

Surface Mount

SQ-MELF, B

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

TIN LEAD

175°C

-65°C

METALLURGICALLY BONDED

8541.10.00.70

END

WRAP AROUND

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

50nA @ 50V

1.2V @ 100mA

ISOLATED

300mA

-65°C~175°C

0.3A

50V

300mA

20 ns

50V

5pF @ 0V 1MHz

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
1N6628US

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

-

Surface Mount, Through Hole

Surface Mount

SQ-MELF, A

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

METALLURGICALLY BONDED

8541.10.00.80

END

WRAP AROUND

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

2μA @ 660V

1.35V @ 2A

ISOLATED

1.75A

-65°C~150°C

4A

660V

1.75A

30 ns

660V

40pF @ 10V 1MHz

Non-RoHS Compliant

-

Rectifier Diodes

AVALANCHE

HIGH VOLTAGE ULTRA FAST RECOVERY

1.5V

1

2μA

75A

Yes

-

-

-

1N6643US vs 1N6628US
1N6621

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

HIGH RELIABILITY

8541.10.00.80

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

500nA @ 440V

1.4V @ 1.2A

ISOLATED

1.2A

-65°C~150°C

-

440V

1.2A

30 ns

440V

10pF @ 10V 1MHz

Non-RoHS Compliant

-

-

AVALANCHE

ULTRA FAST RECOVERY

1.6V

1

-

20A

-

not_compliant

0.5μA

-

1N6643US vs 1N6621
1N6631

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Lead, Tin

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

-

Discontinued

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

150°C

-65°C

METALLURGICALLY BONDED, HIGH RELIABILITY

8541.10.00.80

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

4μA @ 1100V

1.4V @ 1.4A

ISOLATED

1.4A

-65°C~150°C

-

1.1kV

1.4A

60 ns

1.1kV

40pF @ 10V 1MHz

Non-RoHS Compliant

-

-

-

ULTRA FAST RECOVERY

1.95V

1

-

60A

-

-

-

1100V

1N6643US vs 1N6631