Microsemi Corporation 1N6623US
- Part Number:
- 1N6623US
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2435434-1N6623US
- Description:
- DIODE GEN PURP 880V 1A A-MELF
- Datasheet:
- 1N6623US
Microsemi Corporation 1N6623US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6623US.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time17 Weeks
- Contact PlatingLead, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSQ-MELF, A
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.10.00.80
- TechnologyAVALANCHE
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr500nA @ 880V
- Voltage - Forward (Vf) (Max) @ If1.55V @ 1A
- Case ConnectionISOLATED
- Forward Current1A
- Operating Temperature - Junction-65°C~150°C
- Output Current-Max1A
- Forward Voltage1.8V
- Max Reverse Voltage (DC)880V
- Average Rectified Current1A
- Reverse Recovery Time50 ns
- Peak Reverse Current500nA
- Max Repetitive Reverse Voltage (Vrrm)880V
- Capacitance @ Vr, F10pF @ 10V 1MHz
- Peak Non-Repetitive Surge Current20A
- Natural Thermal Resistance13 °C/W
- Radiation HardeningYes
- RoHS StatusNon-RoHS Compliant
1N6623US Overview
A rectified current of 1A volts is averaged for this device.A value of 1A is the maximum forward current that can be allowed.As a heat property, thermal resistance is a measurement of a temperature difference that inhibits heat flow from an object or material, and it is 13 °C/W at natural temperatures.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 1A.As indicated by the data chart in the datasheets, the peak reverse is 500nA.
1N6623US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA
1N6623US Applications
There are a lot of Microsemi Corporation
1N6623US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A rectified current of 1A volts is averaged for this device.A value of 1A is the maximum forward current that can be allowed.As a heat property, thermal resistance is a measurement of a temperature difference that inhibits heat flow from an object or material, and it is 13 °C/W at natural temperatures.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 1A.As indicated by the data chart in the datasheets, the peak reverse is 500nA.
1N6623US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA
1N6623US Applications
There are a lot of Microsemi Corporation
1N6623US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N6623US More Descriptions
Diode Ultra Fast Recovery 800V 1.5A 2-Pin Case A Bag
Diode Switching 800V 1A 2-Pin A-MELF Bag
UFR,FRR _ A-Body Sq. Melf
DIODE SCHOTTKY 40V 15A DO5
Diode Switching 800V 1A 2-Pin A-MELF Bag
UFR,FRR _ A-Body Sq. Melf
DIODE SCHOTTKY 40V 15A DO5
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