1N6623US

Microsemi Corporation 1N6623US

Part Number:
1N6623US
Manufacturer:
Microsemi Corporation
Ventron No:
2435434-1N6623US
Description:
DIODE GEN PURP 880V 1A A-MELF
ECAD Model:
Datasheet:
1N6623US

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Specifications
Microsemi Corporation 1N6623US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N6623US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    500nA @ 880V
  • Voltage - Forward (Vf) (Max) @ If
    1.55V @ 1A
  • Case Connection
    ISOLATED
  • Forward Current
    1A
  • Operating Temperature - Junction
    -65°C~150°C
  • Output Current-Max
    1A
  • Forward Voltage
    1.8V
  • Max Reverse Voltage (DC)
    880V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    50 ns
  • Peak Reverse Current
    500nA
  • Max Repetitive Reverse Voltage (Vrrm)
    880V
  • Capacitance @ Vr, F
    10pF @ 10V 1MHz
  • Peak Non-Repetitive Surge Current
    20A
  • Natural Thermal Resistance
    13 °C/W
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
Description
1N6623US Overview
A rectified current of 1A volts is averaged for this device.A value of 1A is the maximum forward current that can be allowed.As a heat property, thermal resistance is a measurement of a temperature difference that inhibits heat flow from an object or material, and it is 13 °C/W at natural temperatures.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 1A.As indicated by the data chart in the datasheets, the peak reverse is 500nA.

1N6623US Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500nA


1N6623US Applications
There are a lot of Microsemi Corporation
1N6623US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N6623US More Descriptions
Diode Ultra Fast Recovery 800V 1.5A 2-Pin Case A Bag
Diode Switching 800V 1A 2-Pin A-MELF Bag
UFR,FRR _ A-Body Sq. Melf
DIODE SCHOTTKY 40V 15A DO5
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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