Microsemi Corporation 1N5822

Name: 1N5822
Brand: Microsemi Corporation
SKU: 3812674-1N5822
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N5822

Manufacturer:: Microsemi Corporation

Ventron No:: 3812674-1N5822

Description:: DIODE SCHOTTKY 40V 3A AXIAL

ECAD Model:

Datasheet:: 1N5822

Part Pictures

Specifications

Microsemi Corporation 1N5822 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5822.

Voltage - Forward (Vf) (Max) @ If:
500mV @ 3A
Voltage - DC Reverse (Vr) (Max):
40V
Speed:
Fast Recovery = 200mA (Io)
Series:
Military, MIL-PRF-19500/620
Packaging:
Bulk
Package / Case:
B, Axial
Operating Temperature - Junction:
-65°C ~ 125°C
Mounting Type:
Through Hole
Diode Type:
Schottky
Current - Reverse Leakage @ Vr:
100mA @ 40V
Current - Average Rectified (Io):
3A
Capacitance @ Vr, F:
-

Description

part No. 1N5822 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

1N5822 More Descriptions

Tape & Reel (TR) Through Hole Schottky Single Diode Schottky 190pF @ 4V 1MHz 3A 525mV 190pF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD
Diode Schottky 40 Volt 3A 2-Pin DO-201AD Tape and Reel
1N5822 Series 40 V 3 A Through Hole Schottky Rectifier - DO-201AD
Rectifier Diode Schottky 40V 3A 2-Pin DO-201AD T/R
Schottky Barrier Rectifier, 3.0 A, 40 V
DIODE, SCHOTTKY, 3A, 40V; Diode Type:Schottky; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):3A; Forward Voltage VF Max:525mV; Forward Surge Current Ifsm Max:80A; Diode Case Style:DO-201AD; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifsm:80A; External Diameter:5.6mm; External Length / Height:9.5mm; Forward Current If Max:3A; Junction Temperature Tj Max:125°C; Package / Case:DO-201AD; Termination Type:Axial Leaded

Product Comparison

The three parts on the right have similar specifications to 1N5822.

Image

Part Number

Manufacturer

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Output Current-Max

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Natural Thermal Resistance

Height

Length

Width

RoHS Status

Lead Free

Supplier Device Package:

Terminal Finish

Capacitance

Voltage - Rated DC

Current Rating

Polarity

Configuration

Output Current

View Compare
1N5822

Microsemi Corporation

500mV @ 3A

40V

Fast Recovery = 200mA (Io)

Military, MIL-PRF-19500/620

Bulk

B, Axial

-65°C ~ 125°C

Through Hole

Schottky

100mA @ 40V

3A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N5820-B

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

8 Weeks

Tin

Through Hole

Through Hole

DO-201AD, Axial

2

1.09999g

SILICON

Bulk

2006

e3

no

Obsolete

1 (Unlimited)

2

EAR99

150°C

-65°C

FREE WHEELING DIODE, LOW POWER LOSS

8541.10.00.80

Rectifier Diodes

WIRE

260

not_compliant

40

1N5820

2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

2mA @ 20V

475mV @ 3A

ISOLATED

3A

-65°C~150°C

3A

EFFICIENCY

850mV

20V

3A

1

2mA

20V

80A

80A

40 °C/W

5.3mm

9.5mm

5.3mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

1N5822 vs 1N5820-B
1N5822RL

ON Semiconductor

525mV @ 3A

40V

Fast Recovery = 200mA (Io)

-

Tape & Reel (TR)

DO-201AA, DO-27, Axial

-65°C ~ 125°C

Through Hole

Schottky

2mA @ 40V

3A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DO-201AD

-

-

-

-

-

-

-

1N5822 vs 1N5822RL
1N5818/54

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

Through Hole

DO-204AL, DO-41, Axial

2

-

SILICON

Tape & Reel (TR)

2012

e0

-

Obsolete

Not Applicable

2

EAR99

-

-

FREE WHEELING DIODE

8541.10.00.80

-

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

1N5818

2

Not Qualified

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 30V

550mV @ 1A

ISOLATED

-

-65°C~125°C

-

-

-

30V

1A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

TIN LEAD

110pF

30V

1A

Standard

SINGLE

1A

1N5822 vs 1N5818/54