1N3891R

GeneSiC Semiconductor 1N3891R

Part Number:
1N3891R
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2430039-1N3891R
Description:
DIODE GEN PURP REV 200V 12A DO4
ECAD Model:
Datasheet:
1N3891R

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Specifications
GeneSiC Semiconductor 1N3891R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3891R.
  • Lifecycle Status
    PRODUCTION (Last Updated: 5 months ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Base Part Number
    1N3891R
  • JESD-30 Code
    O-MUPM-D1
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    25μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.4V @ 12A
  • Case Connection
    ANODE
  • Forward Current
    12A
  • Operating Temperature - Junction
    -65°C~150°C
  • Max Surge Current
    90A
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    12A
  • Number of Phases
    1
  • Reverse Recovery Time
    200 ns
  • Peak Reverse Current
    25μA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Reverse Voltage
    200V
  • Recovery Time
    200 ns
  • Natural Thermal Resistance
    2 °C/W
  • RoHS Status
    RoHS Compliant
Description
1N3891R Overview
An appropriate reverse voltage is 200V.Devices with this rating have an average rectified current of 12A volts.12A is the maximum value of forward current.As an object or material resists a heat flow, thermal resistance is its ability to measure the temperature difference across it. The natural thermal resistance of an object or material is 2 °C/W.There can be no surge current above 90A.Using the data chart, the peak reverse is 25μA in the datasheets.

1N3891R Features
an average rectified current of 12A volts
the peak reverse is 25μA


1N3891R Applications
There are a lot of GeneSiC Semiconductor
1N3891R applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N3891R More Descriptions
200V 12A DO-4 Silicon Stud Rectifier - Fast Recovery (Reverse Configuration)
DIODE GEN PURP REV 200V 12A DO4
RECTIFIER, FAST, SINGLE, 12A, 200V, DO-203AA; Diode Module Configuration:Single; Forward Current If(AV):12A; Forward Voltage VF Max:1.4V; No. of Phases:Single; Repetitive Reverse Voltage Vrrm Max:200V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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