1N3673AR

GeneSiC Semiconductor 1N3673AR

Part Number:
1N3673AR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
3063663-1N3673AR
Description:
DIODE GEN PURP REV 1KV 12A DO4
ECAD Model:
Datasheet:
1N3673AR

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Specifications
GeneSiC Semiconductor 1N3673AR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3673AR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    1N3673AR
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    10μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 12A
  • Case Connection
    ANODE
  • Forward Current
    12A
  • Operating Temperature - Junction
    -65°C~200°C
  • Max Surge Current
    240A
  • Application
    GENERAL PURPOSE
  • Voltage - DC Reverse (Vr) (Max)
    1000V
  • Max Reverse Voltage (DC)
    1kV
  • Average Rectified Current
    12A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    1kV
  • Reverse Voltage
    1kV
  • RoHS Status
    RoHS Compliant
Description
1N3673AR Overview
The reverse voltage should be 1kV.In this device, there is an average rectified current of 12A volts.Forward current may not exceed 12A.This is the maximum amount of 240A surge current that can be used.As the data chart indicates, the peak reverse is 10μA.

1N3673AR Features
an average rectified current of 12A volts
the peak reverse is 10μA


1N3673AR Applications
There are a lot of GeneSiC Semiconductor
1N3673AR applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N3673AR More Descriptions
1000V 12A DO-4 Silicon Stud Rectifier - Standard Recovery (Reverse Configuration)
DIODE GEN PURP REV 1KV 12A DO4
Standard Recovery - 1000 V - 12 A
Rectifiers 1000V 12A REV Leads Std. Recovery
Standard Recovery, 1000V, 12A, Do-4; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:12A; Forward Voltage Max:1.1V; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Forward Surge Current:240A Rohs Compliant: Yes |Genesic Semiconductor 1N3673AR
Product Comparison
The three parts on the right have similar specifications to 1N3673AR.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Voltage - DC Reverse (Vr) (Max)
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Reverse Voltage
    RoHS Status
    Surface Mount
    ECCN Code
    Additional Feature
    HTS Code
    Operating Temperature (Max)
    Power Dissipation-Max
    Output Current-Max
    Current - Average Rectified (Io)
    Rep Pk Reverse Voltage-Max
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Peak Non-Repetitive Surge Current
    Natural Thermal Resistance
    Radiation Hardening
    JESD-609 Code
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    View Compare
  • 1N3673AR
    1N3673AR
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    2
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    NOT SPECIFIED
    NOT SPECIFIED
    1N3673AR
    O-MUPM-D1
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard, Reverse Polarity
    10μA @ 50V
    1.1V @ 12A
    ANODE
    12A
    -65°C~200°C
    240A
    GENERAL PURPOSE
    1000V
    1kV
    12A
    1
    10μA
    1kV
    1kV
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N3643
    IN PRODUCTION (Last Updated: 1 month ago)
    17 Weeks
    -
    Through Hole
    S, Axial
    -
    SILICON
    Bulk
    1997
    -
    Active
    1 (Unlimited)
    2
    -
    WIRE
    -
    -
    -
    O-LALF-W2
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    100μA @ 1000V
    5V @ 250mA
    ISOLATED
    -
    -65°C~175°C
    -
    -
    1000V
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    EAR99
    HIGH RELIABILITY
    8541.10.00.70
    175°C
    1.5W
    0.25A
    250mA
    1000V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N3671A
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    -
    -
    Bulk
    2017
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    1N3671
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    800μA @ 800V
    1.35V @ 12A
    -
    12A
    -65°C~200°C
    240A
    -
    800V
    800V
    12A
    -
    800μA
    800V
    800V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    12A
    -
    DO-203AA
    200°C
    -65°C
    Single
    240A
    0.5 °C/W
    No
    -
    -
    -
    -
  • 1N3645
    IN PRODUCTION (Last Updated: 1 month ago)
    17 Weeks
    Through Hole
    Through Hole
    S, Axial
    2
    SILICON
    Bulk
    1997
    no
    Active
    1 (Unlimited)
    2
    -
    WIRE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    100μA @ 1400V
    5V @ 250mA
    ISOLATED
    -
    -65°C~175°C
    -
    -
    1400V
    1.4kV
    250mA
    -
    5μA
    2kV
    -
    Non-RoHS Compliant
    -
    EAR99
    METALLURGICALLY BONDED, HIGH RELIABILITY
    8541.10.00.70
    -
    -
    -
    -
    -
    -
    175°C
    -65°C
    Single
    14A
    -
    Yes
    e0
    Tin/Lead (Sn/Pb)
    not_compliant
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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