1N3671A

GeneSiC Semiconductor 1N3671A

Part Number:
1N3671A
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2430084-1N3671A
Description:
DIODE GEN PURP 800V 12A DO4
ECAD Model:
Datasheet:
1N3671A

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Specifications
GeneSiC Semiconductor 1N3671A technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3671A.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    1N3671
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    10μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 12A
  • Case Connection
    CATHODE
  • Forward Current
    12A
  • Operating Temperature - Junction
    -65°C~200°C
  • Max Surge Current
    240A
  • Application
    GENERAL PURPOSE
  • Max Reverse Voltage (DC)
    800V
  • Average Rectified Current
    12A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    800V
  • Reverse Voltage
    800V
  • Natural Thermal Resistance
    2 °C/W
  • RoHS Status
    RoHS Compliant
Description
1N3671A Overview
Phase diode rectifier is reasonable to reverse the voltage to 800V.This device's average rectified current is zero volts.A forward current of 12A is allowed.A thermal resistance value is how much a material or object resists a heat flow at a given temperature difference, and its natural thermal resistance is 2 °C/W.Surge currents are limited to 240A.The datasheets show a peak reverse of 10μA, as shown in the data chart.

1N3671A Features
an average rectified current of 12A volts
the peak reverse is 10μA


1N3671A Applications
There are a lot of GeneSiC Semiconductor
1N3671A applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N3671A More Descriptions
800V 12A DO-4 Silicon Stud Rectifier - Standard Recovery (Standard Configuration)
Rectifier Diode Switching 800V 12A 2-Pin DO-4
Rectifiers 800V 12A Std. Recovery
Standard Recovery, 800V, 12A, Do-4; Repetitive Peak Reverse Voltage:800V; Average Forward Current:12A; Forward Voltage Max:1.1V; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Forward Surge Current:240A Rohs Compliant: Yes |Genesic Semiconductor 1N3671A
Product Comparison
The three parts on the right have similar specifications to 1N3671A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Reverse Voltage
    Natural Thermal Resistance
    RoHS Status
    Contact Plating
    Supplier Device Package
    Series
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Reverse Recovery Time
    Peak Non-Repetitive Surge Current
    Recovery Time
    Radiation Hardening
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Reach Compliance Code
    Qualification Status
    View Compare
  • 1N3671A
    1N3671A
    PRODUCTION (Last Updated: 6 months ago)
    6 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    2
    SILICON
    Bulk
    2010
    yes
    Active
    1 (Unlimited)
    1
    UPPER
    SOLDER LUG
    NOT SPECIFIED
    NOT SPECIFIED
    1N3671
    O-MUPM-D1
    1
    SINGLE
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    10μA @ 50V
    1.1V @ 12A
    CATHODE
    12A
    -65°C~200°C
    240A
    GENERAL PURPOSE
    800V
    12A
    1
    10μA
    800V
    800V
    2 °C/W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N3613GPHE3/54
    -
    -
    Through Hole
    Through Hole
    DO-204AL, DO-41, Axial
    -
    -
    Tape & Reel (TR)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    1N3613
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    1μA @ 600V
    1V @ 1A
    -
    -
    -65°C~175°C
    30A
    -
    600V
    1A
    -
    1μA
    600V
    600V
    -
    ROHS3 Compliant
    Tin
    DO-204AL (DO-41)
    SUPERECTIFIER®
    175°C
    -65°C
    Single
    600V
    1A
    2 μs
    30A
    2 μs
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-1N3671A
    -
    13 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    -
    -
    Bulk
    2017
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    1N3671
    -
    -
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    800μA @ 800V
    1.35V @ 12A
    -
    12A
    -65°C~200°C
    240A
    -
    800V
    12A
    -
    800μA
    800V
    800V
    0.5 °C/W
    ROHS3 Compliant
    -
    DO-203AA
    -
    200°C
    -65°C
    Single
    800V
    12A
    -
    240A
    -
    No
    -
    -
    -
    -
    -
    -
    -
  • 1N3645
    IN PRODUCTION (Last Updated: 1 month ago)
    17 Weeks
    Through Hole
    Through Hole
    S, Axial
    2
    SILICON
    Bulk
    1997
    no
    Active
    1 (Unlimited)
    2
    -
    WIRE
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1
    -
    Standard Recovery >500ns, > 200mA (Io)
    Standard
    100μA @ 1400V
    5V @ 250mA
    ISOLATED
    -
    -65°C~175°C
    -
    -
    1.4kV
    250mA
    -
    5μA
    2kV
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    175°C
    -65°C
    Single
    1400V
    -
    -
    14A
    -
    Yes
    e0
    EAR99
    Tin/Lead (Sn/Pb)
    METALLURGICALLY BONDED, HIGH RELIABILITY
    8541.10.00.70
    not_compliant
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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